Matches in DBpedia 2014 for { ?s ?p The 14 nanometer (14 nm) node is the technology node following the 22 nm/(20 nm) node. The exact naming of this technology nodes as "16 nm" originally came from the International Technology Roadmap for Semiconductors (ITRS). By current estimates the 14 nm technology is projected to be reached by semiconductor companies in the 2014 timeframe.14 nm resolution is difficult to achieve in a polymeric resist, even with electron beam lithography. In addition, the chemical effects of ionizing radiation also limit reliable resolution to about 30 nm, which is also achievable using current state-of-the-art immersion lithography. Hardmask materials and multiple patterning will be required.A more significant limitation comes from plasma damage to low-k materials. The extent of damage is typically 20 nm thick, but can also go up to about 100 nm. The damage sensitivity is expected to get worse as the low-k materials become more porous.For comparison, the lattice constant, or distance between surface atoms, of unstrained silicon is 543 pm (0.543 nm). Thus fewer than thirty atoms would span the channel length, leading to substantial leakage.Tela Innovations and Sequoia Design Systems have developed a methodology allowing double exposure for the 14 nm node.Samsung and Synopsys have also begun implementing double patterning in 22 nm and 16 nm design flows.Mentor Graphics reported taping out 16 nm test chips in 2010.On January 17, 2011, IBM announced that they are teaming up with ARM to develop 14 nm chip processing technology.On February 18, 2011, Intel announced that it would construct a new $5 billion fab in Arizona, designed to manufacture chips using 14 nm manufacturing processes and leading-edge 300 mm wafers. The new lab will be named Fab 42, and construction will start in the middle of 2011. Intel billed the new facility as "the most advanced, high-volume manufacturing facility in the world," and said it would come on line in 2013. Intel has since decided to postpone opening this facility and instead upgrade its existing facilities to support 14-nm chips.On May 17, 2011, Intel announced a roadmap for 2014 that includes 14 nm transistors for their Xeon, Core, and Atom product lines.. }
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- 14_nanometer abstract "The 14 nanometer (14 nm) node is the technology node following the 22 nm/(20 nm) node. The exact naming of this technology nodes as "16 nm" originally came from the International Technology Roadmap for Semiconductors (ITRS). By current estimates the 14 nm technology is projected to be reached by semiconductor companies in the 2014 timeframe.14 nm resolution is difficult to achieve in a polymeric resist, even with electron beam lithography. In addition, the chemical effects of ionizing radiation also limit reliable resolution to about 30 nm, which is also achievable using current state-of-the-art immersion lithography. Hardmask materials and multiple patterning will be required.A more significant limitation comes from plasma damage to low-k materials. The extent of damage is typically 20 nm thick, but can also go up to about 100 nm. The damage sensitivity is expected to get worse as the low-k materials become more porous.For comparison, the lattice constant, or distance between surface atoms, of unstrained silicon is 543 pm (0.543 nm). Thus fewer than thirty atoms would span the channel length, leading to substantial leakage.Tela Innovations and Sequoia Design Systems have developed a methodology allowing double exposure for the 14 nm node.Samsung and Synopsys have also begun implementing double patterning in 22 nm and 16 nm design flows.Mentor Graphics reported taping out 16 nm test chips in 2010.On January 17, 2011, IBM announced that they are teaming up with ARM to develop 14 nm chip processing technology.On February 18, 2011, Intel announced that it would construct a new $5 billion fab in Arizona, designed to manufacture chips using 14 nm manufacturing processes and leading-edge 300 mm wafers. The new lab will be named Fab 42, and construction will start in the middle of 2011. Intel billed the new facility as "the most advanced, high-volume manufacturing facility in the world," and said it would come on line in 2013. Intel has since decided to postpone opening this facility and instead upgrade its existing facilities to support 14-nm chips.On May 17, 2011, Intel announced a roadmap for 2014 that includes 14 nm transistors for their Xeon, Core, and Atom product lines.".