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- 2004117860 contributor B9887222.
- 2004117860 created "c2005.".
- 2004117860 date "2005".
- 2004117860 date "c2005.".
- 2004117860 dateCopyrighted "c2005.".
- 2004117860 description "Includes bibliographical references and index.".
- 2004117860 extent "xiii, 244 p. :".
- 2004117860 identifier "3540241639".
- 2004117860 identifier 2004117860-d.html.
- 2004117860 identifier 2004117860-t.html.
- 2004117860 isPartOf "Topics in applied physics ; v. 98.".
- 2004117860 issued "2005".
- 2004117860 issued "c2005.".
- 2004117860 language "eng".
- 2004117860 publisher "Berlin ; New York : Springer,".
- 2004117860 subject "621.39/732 22".
- 2004117860 subject "Ferroelectricity.".
- 2004117860 subject "TA418.9.T45 F465 2005".
- 2004117860 subject "Thin films.".
- 2004117860 title "Ferroelectric thin films : basic properties and device physics for memory applications / Masanori Okuyama, Yoshihiro Ishibashi (eds.).".
- 2004117860 type "text".