Matches in UGent Biblio for { ?s ?p This paper underpins the influence of space-charge condition at the substrate / BOX interface, as a function of the gate length, on the front threshold voltage (VTHf) and subthreshold slope (S) of sub-32 nm Ultra Thin body (UTB) SOI MOSFETs with very thin buried oxide (UTB2).. }
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- aggregation abstract "This paper underpins the influence of space-charge condition at the substrate / BOX interface, as a function of the gate length, on the front threshold voltage (VTHf) and subthreshold slope (S) of sub-32 nm Ultra Thin body (UTB) SOI MOSFETs with very thin buried oxide (UTB2).".