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- 01GPPY4DBG81ASYZK9XKHT061Q classification A1.
- 01GPPY4DBG81ASYZK9XKHT061Q date "2018".
- 01GPPY4DBG81ASYZK9XKHT061Q language "eng".
- 01GPPY4DBG81ASYZK9XKHT061Q type journalArticle.
- 01GPPY4DBG81ASYZK9XKHT061Q subject "Physics and Astronomy".
- 01GPPY4DBG81ASYZK9XKHT061Q doi "10.1038/s41566-018-0155-y".
- 01GPPY4DBG81ASYZK9XKHT061Q issn "1749-4885".
- 01GPPY4DBG81ASYZK9XKHT061Q issn "1749-4893".
- 01GPPY4DBG81ASYZK9XKHT061Q issue "5".
- 01GPPY4DBG81ASYZK9XKHT061Q volume "12".
- 01GPPY4DBG81ASYZK9XKHT061Q abstract "Controlling light emission from quantum emitters has important applications, ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries such as wires and spheres support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a silicon nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a silicon nanowire.".
- 01GPPY4DBG81ASYZK9XKHT061Q author c32391b6-83b2-11ec-90d2-b5a6d67f82af.
- 01GPPY4DBG81ASYZK9XKHT061Q author urn:uuid:1addc350-38b3-4c35-a4db-ddb5c322bebb.
- 01GPPY4DBG81ASYZK9XKHT061Q author urn:uuid:7e221320-e57a-4626-bd5b-21ce9f7326f1.
- 01GPPY4DBG81ASYZK9XKHT061Q author urn:uuid:b21657fc-72f3-42a5-88e8-2049f03e1855.
- 01GPPY4DBG81ASYZK9XKHT061Q author urn:uuid:ed4b10e1-c998-47df-9e3b-4e41c0841f5a.
- 01GPPY4DBG81ASYZK9XKHT061Q dateCreated "2023-01-14T01:26:01Z".
- 01GPPY4DBG81ASYZK9XKHT061Q dateModified "2024-07-09T07:44:05Z".
- 01GPPY4DBG81ASYZK9XKHT061Q name "Silicon Mie resonators for highly directional light emission from monolayer MoS2".
- 01GPPY4DBG81ASYZK9XKHT061Q pagination urn:uuid:4fd8a0fa-203c-45d0-a4e0-07078b318841.
- 01GPPY4DBG81ASYZK9XKHT061Q sameAs LU-01GPPY4DBG81ASYZK9XKHT061Q.
- 01GPPY4DBG81ASYZK9XKHT061Q sourceOrganization urn:uuid:99c98590-c0ad-4a8b-902d-8b719f5e63af.
- 01GPPY4DBG81ASYZK9XKHT061Q type A1.