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- 01J8QBE91ECBE3S3AC8AA8SDC5 classification A1.
- 01J8QBE91ECBE3S3AC8AA8SDC5 date "2024".
- 01J8QBE91ECBE3S3AC8AA8SDC5 language "eng".
- 01J8QBE91ECBE3S3AC8AA8SDC5 type journalArticle.
- 01J8QBE91ECBE3S3AC8AA8SDC5 hasPart 01J8QBQWP9NWFD1BCFWH4VF26W.pdf.
- 01J8QBE91ECBE3S3AC8AA8SDC5 hasPart 01JBGWVVXKK2C4KC3SM5GH75TD.docx.
- 01J8QBE91ECBE3S3AC8AA8SDC5 hasPart urn:uuid:5bdcae6c-eaef-4db0-b192-491e81c551e0.
- 01J8QBE91ECBE3S3AC8AA8SDC5 subject "Physics and Astronomy".
- 01J8QBE91ECBE3S3AC8AA8SDC5 doi "10.1109/ted.2024.3445310".
- 01J8QBE91ECBE3S3AC8AA8SDC5 issn "0018-9383".
- 01J8QBE91ECBE3S3AC8AA8SDC5 issn "1557-9646".
- 01J8QBE91ECBE3S3AC8AA8SDC5 issue "10".
- 01J8QBE91ECBE3S3AC8AA8SDC5 volume "71".
- 01J8QBE91ECBE3S3AC8AA8SDC5 abstract "In this article, it is proven that in the framework of carrier number fluctuation mechanism, the input referred voltage noise is equal to the flat-band voltage noise only if the access resistances give a negligible contribution to the total device resistance. The expression of the correlated carrier number and mobility fluctuations (CNF/CMF) noise is revisited, and compact analytical equations are proposed. It is demonstrated that if the degradation of the intrinsic mobility in strong inversion is not too significant, considering a constant intrinsic Coulomb scattering coefficient or a constant intrinsic effective Coulomb scattering coefficient leads to similar extracted noise parameters. It is also proven that a constant extrinsic effective Coulomb scattering coefficient is physically incorrect if the access resistances impact cannot be neglected in the total device resistance.".
- 01J8QBE91ECBE3S3AC8AA8SDC5 author 4DC5ED5A-2AE5-11E3-A4E0-796A10BDE39D.
- 01J8QBE91ECBE3S3AC8AA8SDC5 author urn:uuid:1d040f0f-dee2-4521-b72d-6c4ffdb34caa.
- 01J8QBE91ECBE3S3AC8AA8SDC5 author urn:uuid:b38df744-cdc5-4c72-a3bc-292ee3ab4d98.
- 01J8QBE91ECBE3S3AC8AA8SDC5 author urn:uuid:eb2982c4-32ab-44ea-b0d3-4d31a0ac2268.
- 01J8QBE91ECBE3S3AC8AA8SDC5 dateCreated "2024-09-26T14:23:27Z".
- 01J8QBE91ECBE3S3AC8AA8SDC5 dateModified "2024-12-12T21:08:01Z".
- 01J8QBE91ECBE3S3AC8AA8SDC5 name "Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs".
- 01J8QBE91ECBE3S3AC8AA8SDC5 pagination urn:uuid:e678dfa4-73a2-40b7-8e0c-90e8d14baf69.
- 01J8QBE91ECBE3S3AC8AA8SDC5 sameAs LU-01J8QBE91ECBE3S3AC8AA8SDC5.
- 01J8QBE91ECBE3S3AC8AA8SDC5 sourceOrganization urn:uuid:bcfef6d9-2e37-4dd6-b074-231cd3d9bacd.
- 01J8QBE91ECBE3S3AC8AA8SDC5 type A1.