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- 01JAYWVC650F0P9JNKX456JGJS classification A1.
- 01JAYWVC650F0P9JNKX456JGJS date "1973".
- 01JAYWVC650F0P9JNKX456JGJS language "eng".
- 01JAYWVC650F0P9JNKX456JGJS type journalArticle.
- 01JAYWVC650F0P9JNKX456JGJS hasPart 01JAYXCC60YG4RQCGD2HC0AW8W.pdf.
- 01JAYWVC650F0P9JNKX456JGJS subject "Chemistry".
- 01JAYWVC650F0P9JNKX456JGJS subject "Physics and Astronomy".
- 01JAYWVC650F0P9JNKX456JGJS doi "10.1002/pssa.2210200125".
- 01JAYWVC650F0P9JNKX456JGJS issn "0031-8965".
- 01JAYWVC650F0P9JNKX456JGJS issn "1521-396X".
- 01JAYWVC650F0P9JNKX456JGJS issue "1".
- 01JAYWVC650F0P9JNKX456JGJS volume "20".
- 01JAYWVC650F0P9JNKX456JGJS abstract "An alternative approximation for the high frequency MIS capacitance as a function of surface potential and/or biasing potential is proposed. Its main advantage over the existing ones lies in the fact that the correct inversion potential barrier shape in the semiconductor is taken into account. The proposed procedure accounts more accurately for the experimentally observed leveling off of the capacitance at the onset of inversion. As compared with the exact solution as proposed by Sah et al. [4], the present method is much simpler and requires less computation time.".
- 01JAYWVC650F0P9JNKX456JGJS author 78964EC2-B25E-11E6-B104-2D2FD0AF0289.
- 01JAYWVC650F0P9JNKX456JGJS author F373541E-F0ED-11E1-A9DE-61C894A0A6B4.
- 01JAYWVC650F0P9JNKX456JGJS author urn:uuid:f261864c-1519-4522-8d13-c652617d3aa2.
- 01JAYWVC650F0P9JNKX456JGJS dateCreated "2024-10-24T09:13:46Z".
- 01JAYWVC650F0P9JNKX456JGJS dateModified "2024-11-28T00:19:46Z".
- 01JAYWVC650F0P9JNKX456JGJS name "A solution for the high-frequency C versus V curve of MIS structures".
- 01JAYWVC650F0P9JNKX456JGJS pagination urn:uuid:32b314e2-1797-4f75-8f9a-ab84a9340dac.
- 01JAYWVC650F0P9JNKX456JGJS sameAs LU-01JAYWVC650F0P9JNKX456JGJS.
- 01JAYWVC650F0P9JNKX456JGJS sourceOrganization urn:uuid:f23643cd-4be4-4113-ba9d-2db5e4072d70.
- 01JAYWVC650F0P9JNKX456JGJS type A1.