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- Aluminium_indium_arsenide abstract "Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1-xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between InAs and AlAs. The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio.Aluminium indium arsenide is used e.g. as a buffer layer in metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these strcuctures are used in e.g. broadband quantum cascade lasers.".
- Aluminium_indium_arsenide wikiPageID "5268837".
- Aluminium_indium_arsenide wikiPageRevisionID "544390807".
- Aluminium_indium_arsenide hasPhotoCollection Aluminium_indium_arsenide.
- Aluminium_indium_arsenide subject Category:Aluminium_compounds.
- Aluminium_indium_arsenide subject Category:Arsenides.
- Aluminium_indium_arsenide subject Category:III-V_compounds.
- Aluminium_indium_arsenide subject Category:Indium_compounds.
- Aluminium_indium_arsenide subject Category:Semiconductor_materials.
- Aluminium_indium_arsenide type Abstraction100002137.
- Aluminium_indium_arsenide type AluminiumCompounds.
- Aluminium_indium_arsenide type Arsenide114610443.
- Aluminium_indium_arsenide type Arsenides.
- Aluminium_indium_arsenide type Chemical114806838.
- Aluminium_indium_arsenide type Cognition100023271.
- Aluminium_indium_arsenide type Compound105870180.
- Aluminium_indium_arsenide type Compound114818238.
- Aluminium_indium_arsenide type Concept105835747.
- Aluminium_indium_arsenide type Content105809192.
- Aluminium_indium_arsenide type III-VCompounds.
- Aluminium_indium_arsenide type Idea105833840.
- Aluminium_indium_arsenide type IndiumCompounds.
- Aluminium_indium_arsenide type Material114580897.
- Aluminium_indium_arsenide type Matter100020827.
- Aluminium_indium_arsenide type Part113809207.
- Aluminium_indium_arsenide type PhysicalEntity100001930.
- Aluminium_indium_arsenide type PsychologicalFeature100023100.
- Aluminium_indium_arsenide type Relation100031921.
- Aluminium_indium_arsenide type SemiconductorMaterials.
- Aluminium_indium_arsenide type Substance100019613.
- Aluminium_indium_arsenide type Whole105869584.
- Aluminium_indium_arsenide comment "Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1-xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between InAs and AlAs. The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio.Aluminium indium arsenide is used e.g.".
- Aluminium_indium_arsenide label "Aluminium indium arsenide".
- Aluminium_indium_arsenide label "زرنيخيد ألومنيوم إنديوم".
- Aluminium_indium_arsenide sameAs m.0dbrqm.
- Aluminium_indium_arsenide sameAs Q4737390.
- Aluminium_indium_arsenide sameAs Q4737390.
- Aluminium_indium_arsenide sameAs Aluminium_indium_arsenide.
- Aluminium_indium_arsenide wasDerivedFrom Aluminium_indium_arsenide?oldid=544390807.
- Aluminium_indium_arsenide isPrimaryTopicOf Aluminium_indium_arsenide.