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- Indium_gallium_aluminium_nitride abstract "Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN.".
- Indium_gallium_aluminium_nitride wikiPageID "13925557".
- Indium_gallium_aluminium_nitride wikiPageRevisionID "589836739".
- Indium_gallium_aluminium_nitride hasPhotoCollection Indium_gallium_aluminium_nitride.
- Indium_gallium_aluminium_nitride subject Category:Aluminium_compounds.
- Indium_gallium_aluminium_nitride subject Category:Gallium_compounds.
- Indium_gallium_aluminium_nitride subject Category:Indium_compounds.
- Indium_gallium_aluminium_nitride subject Category:Nitrides.
- Indium_gallium_aluminium_nitride type Abstraction100002137.
- Indium_gallium_aluminium_nitride type AluminiumCompounds.
- Indium_gallium_aluminium_nitride type Chemical114806838.
- Indium_gallium_aluminium_nitride type Cognition100023271.
- Indium_gallium_aluminium_nitride type Compound105870180.
- Indium_gallium_aluminium_nitride type Compound114818238.
- Indium_gallium_aluminium_nitride type Concept105835747.
- Indium_gallium_aluminium_nitride type Content105809192.
- Indium_gallium_aluminium_nitride type GalliumCompounds.
- Indium_gallium_aluminium_nitride type Idea105833840.
- Indium_gallium_aluminium_nitride type IndiumCompounds.
- Indium_gallium_aluminium_nitride type Material114580897.
- Indium_gallium_aluminium_nitride type Matter100020827.
- Indium_gallium_aluminium_nitride type Nitride114963317.
- Indium_gallium_aluminium_nitride type Nitrides.
- Indium_gallium_aluminium_nitride type Part113809207.
- Indium_gallium_aluminium_nitride type PhysicalEntity100001930.
- Indium_gallium_aluminium_nitride type PsychologicalFeature100023100.
- Indium_gallium_aluminium_nitride type Relation100031921.
- Indium_gallium_aluminium_nitride type Substance100019613.
- Indium_gallium_aluminium_nitride type Whole105869584.
- Indium_gallium_aluminium_nitride comment "Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN.".
- Indium_gallium_aluminium_nitride label "Indium gallium aluminium nitride".
- Indium_gallium_aluminium_nitride sameAs m.03cnd1q.
- Indium_gallium_aluminium_nitride sameAs Q16887253.
- Indium_gallium_aluminium_nitride sameAs Q16887253.
- Indium_gallium_aluminium_nitride sameAs Indium_gallium_aluminium_nitride.
- Indium_gallium_aluminium_nitride wasDerivedFrom Indium_gallium_aluminium_nitride?oldid=589836739.
- Indium_gallium_aluminium_nitride isPrimaryTopicOf Indium_gallium_aluminium_nitride.