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- Indium_gallium_nitride abstract "Indium gallium nitride (InGaN, InxGa1-xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.".
- Indium_gallium_nitride thumbnail Uv-LED.jpg?width=300.
- Indium_gallium_nitride wikiPageID "3245940".
- Indium_gallium_nitride wikiPageRevisionID "601520461".
- Indium_gallium_nitride hasPhotoCollection Indium_gallium_nitride.
- Indium_gallium_nitride subject Category:Gallium_compounds.
- Indium_gallium_nitride subject Category:III-V_compounds.
- Indium_gallium_nitride subject Category:Indium_compounds.
- Indium_gallium_nitride subject Category:Light-emitting_diode_materials.
- Indium_gallium_nitride subject Category:Nitrides.
- Indium_gallium_nitride subject Category:Semiconductor_materials.
- Indium_gallium_nitride type Abstraction100002137.
- Indium_gallium_nitride type Chemical114806838.
- Indium_gallium_nitride type Cognition100023271.
- Indium_gallium_nitride type Compound105870180.
- Indium_gallium_nitride type Compound114818238.
- Indium_gallium_nitride type Concept105835747.
- Indium_gallium_nitride type Content105809192.
- Indium_gallium_nitride type GalliumCompounds.
- Indium_gallium_nitride type III-VCompounds.
- Indium_gallium_nitride type Idea105833840.
- Indium_gallium_nitride type IndiumCompounds.
- Indium_gallium_nitride type Light-emittingDiodeMaterials.
- Indium_gallium_nitride type Material114580897.
- Indium_gallium_nitride type Matter100020827.
- Indium_gallium_nitride type Nitride114963317.
- Indium_gallium_nitride type Nitrides.
- Indium_gallium_nitride type Part113809207.
- Indium_gallium_nitride type PhysicalEntity100001930.
- Indium_gallium_nitride type PsychologicalFeature100023100.
- Indium_gallium_nitride type Relation100031921.
- Indium_gallium_nitride type SemiconductorMaterials.
- Indium_gallium_nitride type Substance100019613.
- Indium_gallium_nitride type Whole105869584.
- Indium_gallium_nitride comment "Indium gallium nitride (InGaN, InxGa1-xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.".
- Indium_gallium_nitride label "Indium gallium nitride".
- Indium_gallium_nitride label "Indiumgalliumnitrid".
- Indium_gallium_nitride label "Nitrure de gallium-indium".
- Indium_gallium_nitride label "Nitruro de galio-indio".
- Indium_gallium_nitride sameAs Indiumgalliumnitrid.
- Indium_gallium_nitride sameAs Nitruro_de_galio-indio.
- Indium_gallium_nitride sameAs Nitrure_de_gallium-indium.
- Indium_gallium_nitride sameAs m.090_fn.
- Indium_gallium_nitride sameAs Q425734.
- Indium_gallium_nitride sameAs Q425734.
- Indium_gallium_nitride sameAs Indium_gallium_nitride.
- Indium_gallium_nitride wasDerivedFrom Indium_gallium_nitride?oldid=601520461.
- Indium_gallium_nitride depiction Uv-LED.jpg.
- Indium_gallium_nitride isPrimaryTopicOf Indium_gallium_nitride.