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- Insulated-gate_bipolar_transistor abstract "The insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch and in newer devices is noted for combining high efficiency and fast switching. It switches electric power in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, air-conditioners and even stereo systems with switching amplifiers. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse width modulation and low-pass filters. In switching applications modern devices boast pulse repetition rates well into the ultrasonic range—frequencies which are at least ten times the highest audio frequency handled by the device when used as an analog audio amplifier.The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The IGBT is used in medium- to high-power applications like switched-mode power supplies, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages of 6000 V, equating to hundreds of kilowatts.The IGBT is a fairly recent invention. The first-generation devices of the 1980s and early 1990s were prone to failure through such modes like latchup (in which the device will not turn off as long as current is flowing) and secondary breakdown (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents). Second-generation devices were much improved, and the current third-generation ones are even better, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads.The extremely high pulse ratings of second- and third-generation devices also make them useful for generating large power pulses in areas like particle and plasma physics, where they are starting to supersede older devices like thyratrons and triggered spark gaps.Their high pulse ratings, and low prices on the surplus market, also make them attractive to the high-voltage hobbyist for controlling large amounts of power to drive devices like solid-state Tesla coils and coilguns.Availability of affordable, reliable IGBTs is an important enabler for electric vehicles and hybrid cars.".
- Insulated-gate_bipolar_transistor individualisedGnd "4273802-7".
- Insulated-gate_bipolar_transistor thumbnail IGBT_N-dep_symbol_(case).svg?width=300.
- Insulated-gate_bipolar_transistor wikiPageExternalLink wheatley.html.
- Insulated-gate_bipolar_transistor wikiPageExternalLink igbt.html.
- Insulated-gate_bipolar_transistor wikiPageExternalLink Igbt.pdf.
- Insulated-gate_bipolar_transistor wikiPageExternalLink IXYS_IGBT_Basic_I.pdf.
- Insulated-gate_bipolar_transistor wikiPageExternalLink hdd.htm.
- Insulated-gate_bipolar_transistor wikiPageExternalLink igbt-driver-calculation.
- Insulated-gate_bipolar_transistor wikiPageExternalLink SEMIKRON_application_manual_power_semiconductors.pdf.
- Insulated-gate_bipolar_transistor wikiPageExternalLink application_manual-193.htm.
- Insulated-gate_bipolar_transistor wikiPageID "109053".
- Insulated-gate_bipolar_transistor wikiPageRevisionID "599425213".
- Insulated-gate_bipolar_transistor gnd "4273802".
- Insulated-gate_bipolar_transistor hasPhotoCollection Insulated-gate_bipolar_transistor.
- Insulated-gate_bipolar_transistor typ "s".
- Insulated-gate_bipolar_transistor subject Category:Power_electronics.
- Insulated-gate_bipolar_transistor subject Category:Solid_state_switches.
- Insulated-gate_bipolar_transistor subject Category:Transistor_types.
- Insulated-gate_bipolar_transistor type Agent.
- Insulated-gate_bipolar_transistor type Agent.
- Insulated-gate_bipolar_transistor type Thing.
- Insulated-gate_bipolar_transistor comment "The insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch and in newer devices is noted for combining high efficiency and fast switching. It switches electric power in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, air-conditioners and even stereo systems with switching amplifiers.".
- Insulated-gate_bipolar_transistor label "Bipolartransistor mit isolierter Gate-Elektrode".
- Insulated-gate_bipolar_transistor label "IGBT".
- Insulated-gate_bipolar_transistor label "IGBT".
- Insulated-gate_bipolar_transistor label "Insulated-gate bipolar transistor".
- Insulated-gate_bipolar_transistor label "Insulated-gate bipolar transistor".
- Insulated-gate_bipolar_transistor label "Transistor IGBT".
- Insulated-gate_bipolar_transistor label "Transistor bipolaire à grille isolée".
- Insulated-gate_bipolar_transistor label "Transistor bipolare a gate isolato".
- Insulated-gate_bipolar_transistor label "Биполярный транзистор с изолированным затвором".
- Insulated-gate_bipolar_transistor label "ترانزستور ثنائي القطبية ذو بوابة معزولة".
- Insulated-gate_bipolar_transistor label "絕緣柵雙極晶體管".
- Insulated-gate_bipolar_transistor label "絶縁ゲートバイポーラトランジスタ".
- Insulated-gate_bipolar_transistor sameAs IGBT.
- Insulated-gate_bipolar_transistor sameAs Bipolartransistor_mit_isolierter_Gate-Elektrode.
- Insulated-gate_bipolar_transistor sameAs Transistor_IGBT.
- Insulated-gate_bipolar_transistor sameAs Transistor_bipolaire_à_grille_isolée.
- Insulated-gate_bipolar_transistor sameAs Transistor_dwikutub_gerbang-terisolasi.
- Insulated-gate_bipolar_transistor sameAs Transistor_bipolare_a_gate_isolato.
- Insulated-gate_bipolar_transistor sameAs 絶縁ゲートバイポーラトランジスタ.
- Insulated-gate_bipolar_transistor sameAs 절연_게이트_양극성_트랜지스터.
- Insulated-gate_bipolar_transistor sameAs Insulated-gate_bipolar_transistor.
- Insulated-gate_bipolar_transistor sameAs IGBT.
- Insulated-gate_bipolar_transistor sameAs IGBT.
- Insulated-gate_bipolar_transistor sameAs m.0rjb4.
- Insulated-gate_bipolar_transistor sameAs Q176110.
- Insulated-gate_bipolar_transistor sameAs Q176110.
- Insulated-gate_bipolar_transistor wasDerivedFrom Insulated-gate_bipolar_transistor?oldid=599425213.
- Insulated-gate_bipolar_transistor depiction IGBT_N-dep_symbol_(case).svg.
- Insulated-gate_bipolar_transistor isPrimaryTopicOf Insulated-gate_bipolar_transistor.