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- Intel_TeraHertz abstract "Intel TeraHertz was Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages. Using zirconium dioxide instead of silicon dioxide, this transistor can reduce the current leakage, and thus reduces power consumption while still working at higher speed and using lower voltages.One element of this structure is a "depleted substrate transistor," which is a type of CMOS device where the transistor is built in an ultra-thin layer of silicon on top of an embedded layer of insulation. This ultra-thin silicon layer is fully depleted to maximize drive current when the transistor is turned on, allowing the transistor to switch on and off faster.In contrast, when the transistor is turned off, unwanted current leakage is minimized by the thin insulating layer. This allows the depleted substrate transistor to have 100 times less leakage than traditional silicon-on-insulator schemes. Another innovation of Intel's depleted substrate transistor is the use of low resistance contacts on top of the silicon layer. The transistor can therefore be very small, very fast and consume less power.Another important element is the development of a new material that replaces silicon dioxide on the wafer. All transistors have a "gate-dielectric," a material that separates a transistor's "gate" from its active region (the gate controls the on-off state of the transistor).According to Intel, the new design could use only 0.6 volts. Intel TeraHertz was unveiled in 2001. As of 2013, it is not used in processors.".
- Intel_TeraHertz wikiPageExternalLink 0,1000000091,2099821,00.htm.
- Intel_TeraHertz wikiPageExternalLink 185749-10-intel-terahertz-transistor.
- Intel_TeraHertz wikiPageID "17351383".
- Intel_TeraHertz wikiPageRevisionID "588419224".
- Intel_TeraHertz hasPhotoCollection Intel_TeraHertz.
- Intel_TeraHertz subject Category:Intel_microprocessors.
- Intel_TeraHertz subject Category:Intel_products.
- Intel_TeraHertz type Artifact100021939.
- Intel_TeraHertz type Chip103020034.
- Intel_TeraHertz type Commodity103076708.
- Intel_TeraHertz type Conductor103088707.
- Intel_TeraHertz type Device103183080.
- Intel_TeraHertz type Instrumentality103575240.
- Intel_TeraHertz type IntelMicroprocessors.
- Intel_TeraHertz type IntelProducts.
- Intel_TeraHertz type Merchandise103748886.
- Intel_TeraHertz type Microprocessor103760310.
- Intel_TeraHertz type Object100002684.
- Intel_TeraHertz type PhysicalEntity100001930.
- Intel_TeraHertz type SemiconductorDevice104171831.
- Intel_TeraHertz type Whole100003553.
- Intel_TeraHertz comment "Intel TeraHertz was Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages.".
- Intel_TeraHertz label "Intel TeraHertz".
- Intel_TeraHertz label "Intel TeraHertz".
- Intel_TeraHertz sameAs Intel_TeraHertz.
- Intel_TeraHertz sameAs m.043mh_3.
- Intel_TeraHertz sameAs Q6043552.
- Intel_TeraHertz sameAs Q6043552.
- Intel_TeraHertz sameAs Intel_TeraHertz.
- Intel_TeraHertz wasDerivedFrom Intel_TeraHertz?oldid=588419224.
- Intel_TeraHertz isPrimaryTopicOf Intel_TeraHertz.