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- Metalorganic_vapour_phase_epitaxy abstract "Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition. This takes place not in a vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics.".
- Metalorganic_vapour_phase_epitaxy thumbnail MOCVDprocess.jpg?width=300.
- Metalorganic_vapour_phase_epitaxy wikiPageExternalLink DIPMeIn.
- Metalorganic_vapour_phase_epitaxy wikiPageExternalLink DIPTe.
- Metalorganic_vapour_phase_epitaxy wikiPageExternalLink EDMIn.
- Metalorganic_vapour_phase_epitaxy wikiPageExternalLink IBGE.
- Metalorganic_vapour_phase_epitaxy wikiPageID "2925575".
- Metalorganic_vapour_phase_epitaxy wikiPageRevisionID "601882582".
- Metalorganic_vapour_phase_epitaxy hasPhotoCollection Metalorganic_vapour_phase_epitaxy.
- Metalorganic_vapour_phase_epitaxy subject Category:Chemical_processes.
- Metalorganic_vapour_phase_epitaxy subject Category:Semiconductor_device_fabrication.
- Metalorganic_vapour_phase_epitaxy subject Category:Semiconductor_growth.
- Metalorganic_vapour_phase_epitaxy subject Category:Thin_film_deposition.
- Metalorganic_vapour_phase_epitaxy type ChemicalProcess113446390.
- Metalorganic_vapour_phase_epitaxy type ChemicalProcesses.
- Metalorganic_vapour_phase_epitaxy type NaturalProcess113518963.
- Metalorganic_vapour_phase_epitaxy type PhysicalEntity100001930.
- Metalorganic_vapour_phase_epitaxy type Process100029677.
- Metalorganic_vapour_phase_epitaxy comment "Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition.".
- Metalorganic_vapour_phase_epitaxy label "Deposición de vapor mediante procesos químicos organometálicos".
- Metalorganic_vapour_phase_epitaxy label "MOCVD".
- Metalorganic_vapour_phase_epitaxy label "Metallorganische Gasphasenepitaxie".
- Metalorganic_vapour_phase_epitaxy label "Metalorganic vapour phase epitaxy".
- Metalorganic_vapour_phase_epitaxy label "Épitaxie en phase vapeur aux organométalliques".
- Metalorganic_vapour_phase_epitaxy label "Осаждение металлорганических соединений из газообразной фазы".
- Metalorganic_vapour_phase_epitaxy label "有机金属化学气相沉积法".
- Metalorganic_vapour_phase_epitaxy label "有機金属気相成長法".
- Metalorganic_vapour_phase_epitaxy sameAs Metallorganische_Gasphasenepitaxie.
- Metalorganic_vapour_phase_epitaxy sameAs Deposición_de_vapor_mediante_procesos_químicos_organometálicos.
- Metalorganic_vapour_phase_epitaxy sameAs Épitaxie_en_phase_vapeur_aux_organométalliques.
- Metalorganic_vapour_phase_epitaxy sameAs 有機金属気相成長法.
- Metalorganic_vapour_phase_epitaxy sameAs MOCVD.
- Metalorganic_vapour_phase_epitaxy sameAs m.08d10s.
- Metalorganic_vapour_phase_epitaxy sameAs Q1924991.
- Metalorganic_vapour_phase_epitaxy sameAs Q1924991.
- Metalorganic_vapour_phase_epitaxy sameAs Metalorganic_vapour_phase_epitaxy.
- Metalorganic_vapour_phase_epitaxy wasDerivedFrom Metalorganic_vapour_phase_epitaxy?oldid=601882582.
- Metalorganic_vapour_phase_epitaxy depiction MOCVDprocess.jpg.
- Metalorganic_vapour_phase_epitaxy isPrimaryTopicOf Metalorganic_vapour_phase_epitaxy.