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- Plasma-immersion_ion_implantation abstract "Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant the it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc(for metallic species). The vacuum chamber can be of two types - diode and triode type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter.".
- Plasma-immersion_ion_implantation thumbnail PIII.jpg?width=300.
- Plasma-immersion_ion_implantation wikiPageID "13871411".
- Plasma-immersion_ion_implantation wikiPageRevisionID "545008083".
- Plasma-immersion_ion_implantation hasPhotoCollection Plasma-immersion_ion_implantation.
- Plasma-immersion_ion_implantation subject Category:Plasma_physics.
- Plasma-immersion_ion_implantation subject Category:Semiconductor_device_fabrication.
- Plasma-immersion_ion_implantation subject Category:Thin_films.
- Plasma-immersion_ion_implantation subject Category:Reactive-ion_etching.
- Plasma-immersion_ion_implantation type Abstraction100002137.
- Plasma-immersion_ion_implantation type Artifact100021939.
- Plasma-immersion_ion_implantation type Creation103129123.
- Plasma-immersion_ion_implantation type Event100029378.
- Plasma-immersion_ion_implantation type Movie106613686.
- Plasma-immersion_ion_implantation type Object100002684.
- Plasma-immersion_ion_implantation type PhysicalEntity100001930.
- Plasma-immersion_ion_implantation type Product104007894.
- Plasma-immersion_ion_implantation type PsychologicalFeature100023100.
- Plasma-immersion_ion_implantation type Show106619065.
- Plasma-immersion_ion_implantation type SocialEvent107288639.
- Plasma-immersion_ion_implantation type ThinFilms.
- Plasma-immersion_ion_implantation type Whole100003553.
- Plasma-immersion_ion_implantation type YagoPermanentlyLocatedEntity.
- Plasma-immersion_ion_implantation comment "Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant the it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma.".
- Plasma-immersion_ion_implantation label "Plasma-Immersions-Ionenimplantation".
- Plasma-immersion_ion_implantation label "Plasma-immersion ion implantation".
- Plasma-immersion_ion_implantation label "等离子体浸没离子注入".
- Plasma-immersion_ion_implantation sameAs Plasma-Immersions-Ionenimplantation.
- Plasma-immersion_ion_implantation sameAs m.03clt04.
- Plasma-immersion_ion_implantation sameAs Q2098457.
- Plasma-immersion_ion_implantation sameAs Q2098457.
- Plasma-immersion_ion_implantation sameAs Plasma-immersion_ion_implantation.
- Plasma-immersion_ion_implantation wasDerivedFrom Plasma-immersion_ion_implantation?oldid=545008083.
- Plasma-immersion_ion_implantation depiction PIII.jpg.
- Plasma-immersion_ion_implantation isPrimaryTopicOf Plasma-immersion_ion_implantation.