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- Resistive_random-access_memory abstract "Resistive random-access memory (RRAM or ReRAM) is a non-volatile memory type under development by a number of different companies, some of which have patented versions of ReRAM. The technology bears some similarities to CBRAM and phase change memory.In February 2012 Rambus bought a ReRAM company called Unity Semiconductor for $35 million. Panasonic launched a ReRAM evaluation kit in May 2012, based on a tantalum oxide 1T1R (1 transistor - 1 resistor) memory cell architecture.In 2013, Crossbar introduced a prototype of RRAM as a chip about the size of a postage stamp that can store 1 TB of data. According to an August 2013 interview with Crossbar, the large-scale production of their RRAM chips is scheduled for 2015.Different forms of ReRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967, and has recently been revisited.Leon Chua, who is considered to be the father of non-linear circuit theory, has argued that all 2-terminal non-volatile memory devices including ReRAM should be considered memristors. Stan Williams of HP Labs has also argued that all ReRAM should be considered to be a memristor. These claims, however, seem not to be justified given that the memristor theory in itself is open to question. There is an ongoing discussion whether or not redox-based resistively switching elements (ReRAM) are covered by the current memristor theory.".
- Resistive_random-access_memory wikiPageExternalLink eng.
- Resistive_random-access_memory wikiPageID "8768215".
- Resistive_random-access_memory wikiPageRevisionID "598991196".
- Resistive_random-access_memory hasPhotoCollection Resistive_random-access_memory.
- Resistive_random-access_memory subject Category:Computer_memory.
- Resistive_random-access_memory subject Category:Emerging_technologies.
- Resistive_random-access_memory subject Category:Non-volatile_memory.
- Resistive_random-access_memory subject Category:Solid-state_computer_storage_media.
- Resistive_random-access_memory subject Category:Types_of_RAM.
- Resistive_random-access_memory type Artifact100021939.
- Resistive_random-access_memory type Instrumentality103575240.
- Resistive_random-access_memory type Medium106254669.
- Resistive_random-access_memory type Object100002684.
- Resistive_random-access_memory type PhysicalEntity100001930.
- Resistive_random-access_memory type Solid-stateComputerStorageMedia.
- Resistive_random-access_memory type StorageMedium106263762.
- Resistive_random-access_memory type Whole100003553.
- Resistive_random-access_memory comment "Resistive random-access memory (RRAM or ReRAM) is a non-volatile memory type under development by a number of different companies, some of which have patented versions of ReRAM. The technology bears some similarities to CBRAM and phase change memory.In February 2012 Rambus bought a ReRAM company called Unity Semiconductor for $35 million.".
- Resistive_random-access_memory label "RRAM".
- Resistive_random-access_memory label "RRAM".
- Resistive_random-access_memory label "RRAM".
- Resistive_random-access_memory label "ReRAM".
- Resistive_random-access_memory label "Resistive random-access memory".
- Resistive_random-access_memory label "Resistive random-access memory".
- Resistive_random-access_memory label "可變電阻式記憶體".
- Resistive_random-access_memory sameAs Resistive_random-access_memory.
- Resistive_random-access_memory sameAs RRAM.
- Resistive_random-access_memory sameAs ReRAM.
- Resistive_random-access_memory sameAs RRAM.
- Resistive_random-access_memory sameAs RRAM.
- Resistive_random-access_memory sameAs m.027j0hx.
- Resistive_random-access_memory sameAs Q1143830.
- Resistive_random-access_memory sameAs Q1143830.
- Resistive_random-access_memory sameAs Resistive_random-access_memory.
- Resistive_random-access_memory wasDerivedFrom Resistive_random-access_memory?oldid=598991196.
- Resistive_random-access_memory isPrimaryTopicOf Resistive_random-access_memory.