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- 2010395371 alternative "Sub-micron indium phosphide/gallium arsenide antimonide/indium phosphide double heterojunction bipolar transistors for ultra high-speed digital integrated circuits".
- 2010395371 contributor B11907557.
- 2010395371 created "2010.".
- 2010395371 date "2010".
- 2010395371 date "2010.".
- 2010395371 dateCopyrighted "2010.".
- 2010395371 description "Includes bibliographical references (p. [245]-265).".
- 2010395371 extent "x, 265 p. :".
- 2010395371 identifier "3866283016".
- 2010395371 identifier "9783866283015".
- 2010395371 isPartOf "Series in microelectronics, 0936-5362 ; v. 204".
- 2010395371 issued "2010".
- 2010395371 issued "2010.".
- 2010395371 language "Summary in English and German.".
- 2010395371 language "eng ger".
- 2010395371 language "eng".
- 2010395371 publisher "Konstanz : Hartung-Gorre,".
- 2010395371 subject "621.3815/28 21".
- 2010395371 subject "Bipolar transistors Design and construction.".
- 2010395371 subject "Digital integrated circuits.".
- 2010395371 subject "Indium phosphide.".
- 2010395371 subject "Junction transistors Design and construction.".
- 2010395371 subject "TK7871.96.B55 H36 2010".
- 2010395371 subject "Very high speed integrated circuits.".
- 2010395371 title "Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits / Urs Hammer.".
- 2010395371 title "Sub-micron indium phosphide/gallium arsenide antimonide/indium phosphide double heterojunction bipolar transistors for ultra high-speed digital integrated circuits".
- 2010395371 type "text".