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- 01H3VJFXQGJRRTZZ432WH5RRNQ classification C3.
- 01H3VJFXQGJRRTZZ432WH5RRNQ date "2022".
- 01H3VJFXQGJRRTZZ432WH5RRNQ language "eng".
- 01H3VJFXQGJRRTZZ432WH5RRNQ type conference.
- 01H3VJFXQGJRRTZZ432WH5RRNQ subject "Chemistry".
- 01H3VJFXQGJRRTZZ432WH5RRNQ subject "Physics and Astronomy".
- 01H3VJFXQGJRRTZZ432WH5RRNQ presentedAt urn:uuid:cc33e4de-00b3-40bc-b09e-ef3fb825b104.
- 01H3VJFXQGJRRTZZ432WH5RRNQ abstract "ALD Student Award Finalist Talk: Depositing Metal Oxides on Metalcones: Enhancing Initial Growth Through O2 Plasma Densification Juan Santo Domingo Peñaranda‚ Matthias Minjauw‚ Jin Li‚ Sofie Vandenbroucke‚ Jolien Dendooven‚ Christophe Detavernier (Ghent University) Flexible devices for display/battery applications are gaining traction every day‚ but moisture sensitivity can be a concern. For this‚ Thin-Film Encapsulation (TFE) moisture barriers need to be used‚ but many current technologies rely on rigid barriers that crack and stop performing under flexible stress. As a solution‚ organic/inorganic thin film stacks are now widely explored for TFE. In this context‚ we have studied O2 plasma densification on MLD alucone1‚ titanicone‚ tincone and zincone. We also investigated the effect of the growth of ALD metal oxides on metalcones with or without prior plasma densification to optimize the deposition of ALD/MLD multilayers. Upon plasma treatment‚ all metalcone layers exhibited a similar behaviour. A bilayer structure was evidenced by X-ray reflectivity (XRR)‚ composed of a (~2 nm thick) high-density layer on top of one with metalcone-similar density. The overall film thickness decreased and its evolution in both the dense and less-dense layer could be monitored with in-situ ellipsometry (Figure 1)‚ revealing a saturating behavior. In Fourier-Transform Infrared Spectroscopy (FTIR)‚ plasma-treated metalcones (PT-metalcones) showed a decrease in the C-O region and an increase in the C=O one (Figure 2)‚ similar to aged metalcones. After several months of aging‚ only an increase in the O-H band was found. X-ray Photoelectron Spectroscopy (XPS) showed a decrease of C content in the top of the layers that did not reach zero. Thus‚ we conclude that O2 plasma treatments on metalcones produce a partial densification of the layers. The O2 radical species oxidise the topmost region of the hybrid film into its corresponding‚ dense oxide. However‚ O2 radicals penetrate deeper down the layer‚ oxidising the original alcoholic structure into an intermediate ketonic one. According to XPS‚ a material more similar to an oxycarbide may be formed. Secondly‚ metal oxides were grown on top of their respective metalcones‚ and pristine and PT-metalcones were compared. Using in-situ ellipsometry‚ growth on pristine metalcones always suffered a delay until the oxide thickness started to increase(Figure 3)2. However‚ an oxide layer immediately started growing on PT-metalcones‚ from cycle one‚ offering very accurate oxide thickness control. With this‚ we hope to have expanded the potential of using stacks of oxides and PT-metalcones for TFE applications. The use of O2 plasma densifications could hold potential towards film-ratio optimisation for optimum performance at minimal film thicknesses. Santo Domingo Peñaranda et al. Dalt. Trans.2021‚ 50 (4)‚ 1224–1232 Choi et al. ACS Appl. Mater. Interfaces2016‚ 8 (19)‚ 12263–12271".
- 01H3VJFXQGJRRTZZ432WH5RRNQ author 0743CAA4-F0EF-11E1-A197-91C894A0A6B4.
- 01H3VJFXQGJRRTZZ432WH5RRNQ author 1141C520-F0EE-11E1-A9DE-61C894A0A6B4.
- 01H3VJFXQGJRRTZZ432WH5RRNQ author DC199AC0-F0EE-11E1-A197-91C894A0A6B4.
- 01H3VJFXQGJRRTZZ432WH5RRNQ author F552BC16-F0ED-11E1-A9DE-61C894A0A6B4.
- 01H3VJFXQGJRRTZZ432WH5RRNQ author F667AC0C-8917-11E7-A29E-45B6AD28A064.
- 01H3VJFXQGJRRTZZ432WH5RRNQ author FAB2EA82-F0ED-11E1-A9DE-61C894A0A6B4.
- 01H3VJFXQGJRRTZZ432WH5RRNQ author ab16c3bd-e5d3-11e9-b023-da0ec6f6c251.
- 01H3VJFXQGJRRTZZ432WH5RRNQ dateCreated "2023-06-26T10:02:51Z".
- 01H3VJFXQGJRRTZZ432WH5RRNQ dateModified "2024-10-29T17:49:07Z".
- 01H3VJFXQGJRRTZZ432WH5RRNQ name "Depositing ALD-oxides on MLD-metalcones : enhancing initial growth through O2 plasma densification".
- 01H3VJFXQGJRRTZZ432WH5RRNQ publisher urn:uuid:a6b26116-1f78-4e71-887f-de38d03cd362.
- 01H3VJFXQGJRRTZZ432WH5RRNQ sameAs LU-01H3VJFXQGJRRTZZ432WH5RRNQ.
- 01H3VJFXQGJRRTZZ432WH5RRNQ sourceOrganization urn:uuid:8b3e0ce3-7193-4c2e-a0f3-4775acd80c0d.
- 01H3VJFXQGJRRTZZ432WH5RRNQ type C3.