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- 01H4QS6AGYBKVS74ZS5EZBJWYY classification A1.
- 01H4QS6AGYBKVS74ZS5EZBJWYY date "2020".
- 01H4QS6AGYBKVS74ZS5EZBJWYY language "eng".
- 01H4QS6AGYBKVS74ZS5EZBJWYY type journalArticle.
- 01H4QS6AGYBKVS74ZS5EZBJWYY subject "Technology and Engineering".
- 01H4QS6AGYBKVS74ZS5EZBJWYY doi "10.1038/s41598-020-78102-x".
- 01H4QS6AGYBKVS74ZS5EZBJWYY issn "2045-2322".
- 01H4QS6AGYBKVS74ZS5EZBJWYY issue "1".
- 01H4QS6AGYBKVS74ZS5EZBJWYY volume "10".
- 01H4QS6AGYBKVS74ZS5EZBJWYY abstract "There is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention. Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.".
- 01H4QS6AGYBKVS74ZS5EZBJWYY author da2f0513-e388-11ec-a039-c2b815f1732c.
- 01H4QS6AGYBKVS74ZS5EZBJWYY author urn:uuid:300871f7-33b8-43b0-a481-2979752ffa56.
- 01H4QS6AGYBKVS74ZS5EZBJWYY author urn:uuid:3e9484c3-8c37-404e-baef-f2b480378091.
- 01H4QS6AGYBKVS74ZS5EZBJWYY dateCreated "2023-07-07T08:58:41Z".
- 01H4QS6AGYBKVS74ZS5EZBJWYY dateModified "2024-07-09T14:51:05Z".
- 01H4QS6AGYBKVS74ZS5EZBJWYY name "UV induced resistive switching in hybrid polymer metal oxide memristors".
- 01H4QS6AGYBKVS74ZS5EZBJWYY pagination urn:uuid:28d4a294-fbe9-4ef5-a580-8497b62523f9.
- 01H4QS6AGYBKVS74ZS5EZBJWYY sameAs LU-01H4QS6AGYBKVS74ZS5EZBJWYY.
- 01H4QS6AGYBKVS74ZS5EZBJWYY sourceOrganization urn:uuid:ba6cd19d-b3d6-4c71-9a0f-f4a5b2d7e04e.
- 01H4QS6AGYBKVS74ZS5EZBJWYY type A1.