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- 01HAVDFT64C7WB7N42N118PM66 classification C3.
- 01HAVDFT64C7WB7N42N118PM66 date "2023".
- 01HAVDFT64C7WB7N42N118PM66 language "eng".
- 01HAVDFT64C7WB7N42N118PM66 type conference.
- 01HAVDFT64C7WB7N42N118PM66 hasPart 01HBR6XR2X7WY5J881236FRCK9.png.
- 01HAVDFT64C7WB7N42N118PM66 subject "Chemistry".
- 01HAVDFT64C7WB7N42N118PM66 presentedAt urn:uuid:dd993af6-ab9b-45f9-9427-f093f00e4297.
- 01HAVDFT64C7WB7N42N118PM66 abstract "In our modern society people are able to communicate, generate and store enormous amounts of data. As a result, the amount of data traffic worldwide is increasing exponentially and outgrowing the available technology. Therefore, high-speed data communication has become a necessity. By integrating both electronic and photonic functions on a single chip, photonic integrated circuits (PICs) could function as a platform for data communication via optical means. Today, silicon and silicon-nitride materials are mostly used for integrated photonics. The possibilities of these platforms can be further enhanced by the addition of a ferroelectric layer as an active device for a hybrid system. Tuning of the signal can be accomplished by changing the refractive index of the active device via the application of an electric field. The most efficient way to integrate this ferroelectric layer is via direct layer growth on PICs. In this work, calcium strontium barium niobate (CSBN) with promising ferroelectric properties is used. For the direct integration of CaxSryBa1-x-yNb2O6 on Si substrates, we have introduced a wet chemical solution deposition approach by means of spin-coating technique. The implementation of this wet chemical method facilitates molecular level control and low cost production of highly oriented ferroelectric thin films for integrated electro-optic devices.".
- 01HAVDFT64C7WB7N42N118PM66 author 06192A44-F0EE-11E1-A9DE-61C894A0A6B4.
- 01HAVDFT64C7WB7N42N118PM66 author 9DE39FE0-0234-11E4-8A54-7BF54B2F559A.
- 01HAVDFT64C7WB7N42N118PM66 author F6908504-F0ED-11E1-A9DE-61C894A0A6B4.
- 01HAVDFT64C7WB7N42N118PM66 author FA099C70-F0ED-11E1-A9DE-61C894A0A6B4.
- 01HAVDFT64C7WB7N42N118PM66 dateCreated "2023-09-21T08:25:17Z".
- 01HAVDFT64C7WB7N42N118PM66 dateModified "2024-10-29T18:26:23Z".
- 01HAVDFT64C7WB7N42N118PM66 name "Solution-derived CaxSryBa(1-x-y)Nb2O6 thin layers : a novel ferroelectric in photonics".
- 01HAVDFT64C7WB7N42N118PM66 pagination urn:uuid:93f51708-7d40-46e2-8c08-9321ec6cc095.
- 01HAVDFT64C7WB7N42N118PM66 sameAs LU-01HAVDFT64C7WB7N42N118PM66.
- 01HAVDFT64C7WB7N42N118PM66 sourceOrganization urn:uuid:1ffabdbf-e22e-490b-b42c-137fb3998a1d.
- 01HAVDFT64C7WB7N42N118PM66 sourceOrganization urn:uuid:da521513-e29a-41ad-82e5-d69444cb09e3.
- 01HAVDFT64C7WB7N42N118PM66 type C3.
