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- 01HPEDQGCXAA6DDSYQBPC1D1A1 classification C1.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 date "2023".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 language "eng".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 type conference.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 hasPart 01HPS8PWMMGWQ66SWJANJQ8TVP.pdf.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 hasPart 01HPS8R3Y4KMNC8FRER2GEB0S5.pdf.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 subject "Technology and Engineering".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 doi "10.1109/acp/poem59049.2023.10369896".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 isbn "9798350312614".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 presentedAt urn:uuid:eea4b300-7658-45eb-8c5d-8b8dca0c3526.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 abstract "A compact III-V semiconductor laser is regarded as a promising light source for the silicon photonic platform due to its unique advantages of low energy consumption and small footprint. However, the significant lattice mismatch between the III- V material and silicon is a fundamental challenge for the monolithic integration of III-V lasers on silicon substrates and requires specific integration solutions to confined relaxation defects outside the active device region. Here, a distributed feedback GaAs/InGaAs nano-ridge laser directly grown on silicon substrate by nano-ridge engineering is demonstrated. Under pulse pumping, the lasing was achieved with a cavity length as small as 50 μm . This laser establishes a novel route to realize a compact light source for the future high-density and massively scalable silicon photonic integrated circuits.".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 author 71104298-BAC7-11E8-A22B-3DF65607D3EF.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 author 8ed11e7c-3f29-11eb-800a-af766800737f.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 author DD14C2D2-D7D9-11E8-846C-61755607D3EF.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 author F4F6F962-F0ED-11E1-A9DE-61C894A0A6B4.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 author FD7D1114-D8CD-11E9-BEBB-13D15607D3EF.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 author urn:uuid:221879f7-9ae7-4286-b8e3-99a9f11de4a4.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 dateCreated "2024-02-12T10:27:44Z".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 dateModified "2024-10-29T18:32:48Z".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 name "Side-amorphous-silicon-grating InGaAs/GaAs nano-ridge distributed feedback laser monolithically grown on 300 mm silicon substrate".
- 01HPEDQGCXAA6DDSYQBPC1D1A1 pagination urn:uuid:716f84e0-c741-430e-8991-7f9efaf51680.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 publisher urn:uuid:2bd8cf64-702c-4678-9648-87a7e465693c.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 sameAs LU-01HPEDQGCXAA6DDSYQBPC1D1A1.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 sourceOrganization urn:uuid:a5b6b943-f58d-445f-8d4d-ec6aaf80f9a7.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 sourceOrganization urn:uuid:e700044a-003e-4a9a-800c-383ec4fc4238.
- 01HPEDQGCXAA6DDSYQBPC1D1A1 type C1.