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- 01J7JT3XR8EQNZ7NMTMYM1QGA7 classification A1.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 date "1967".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 language "eng".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 type journalArticle.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 hasPart 01J7JTDMEH21PDKX67QQG4YT26.pdf.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 subject "Chemistry".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 subject "Physics and Astronomy".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 doi "10.1002/pssb.19670220218".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 issn "0031-8957".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 issue "2".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 volume "22".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 abstract "The effect of carbon on the copper precipitation behaviour of dislocation-free silicon crystals with low oxygen concentration, is studied by infra-red microscopy, high-resolution X-ray topography and infra-red spectrophotometry. A growth mechanism is proposed for the copper precipitates which is based on indentation at silicon carbide or silica precipitates, followed by climb of dislocation loops. The main type of dislocation likely to produce the observed pattern, is thought to be the 〈100〉 edge dislocations.".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 author 736B9BAA-B25E-11E6-B104-2D2FD0AF0289.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 author 78964EC2-B25E-11E6-B104-2D2FD0AF0289.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 dateCreated "2024-09-12T09:48:02Z".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 dateModified "2024-11-28T00:12:07Z".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 name "The influence of carbon on precipitation of copper in silicon single crystals".
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 pagination urn:uuid:98980e42-e7f2-4dbe-80cf-b94c62501571.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 sameAs LU-01J7JT3XR8EQNZ7NMTMYM1QGA7.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 sourceOrganization urn:uuid:95996e2f-c2cd-4140-8648-fcddf50704c5.
- 01J7JT3XR8EQNZ7NMTMYM1QGA7 type A1.