Matches in UGent Biblio for { <https://biblio.ugent.be/publication/1026495#aggregation> ?p ?o. }
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- aggregation classification "C1".
- aggregation creator B77899.
- aggregation creator B77900.
- aggregation creator B77901.
- aggregation creator B77902.
- aggregation creator B77903.
- aggregation creator B77904.
- aggregation creator B77905.
- aggregation creator person.
- aggregation date "2009".
- aggregation hasFormat 1026495.bibtex.
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- aggregation isPartOf urn:isbn:9781424443512.
- aggregation language "eng".
- aggregation publisher "IEEE".
- aggregation subject "Physics and Astronomy".
- aggregation title "Drain/substrate coupling impact on DIBL of ultra thin body and BOX SOI MOSFETs with undoped channel".
- aggregation abstract "For ultimate MOSFET scaling, ultra thin body and BOX SOI transistors have become of great interest, as they are known to dramatically reduce short channel effects (SCE) while maintaining very high device performance. In this work, we emphasize the impact of the substrate / BOX interface space charge conditions on the drain induced barrier lowering (DIBL) increase with gate length reduction, as this drastically changes the channel position in the film and the drain coupling with the channel via substrate and through the BOX. Several modifications to the MASTAR DIBL model are proposed based on ATLAS simulations of the studied structures, in order to explain those effects and fit the experimental data.".
- aggregation authorList BK199467.
- aggregation endPage "144".
- aggregation startPage "141".
- aggregation isDescribedBy 1026495.
- aggregation similarTo ESSDERC.2009.5331323.
- aggregation similarTo LU-1026495.