Matches in UGent Biblio for { <https://biblio.ugent.be/publication/1026512#aggregation> ?p ?o. }
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- aggregation classification "A1".
- aggregation creator B173900.
- aggregation creator B173901.
- aggregation creator B173902.
- aggregation creator B173903.
- aggregation creator B173904.
- aggregation creator person.
- aggregation date "2007".
- aggregation format "application/pdf".
- aggregation hasFormat 1026512.bibtex.
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- aggregation isPartOf urn:issn:0268-1242.
- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Physics and Astronomy".
- aggregation title "Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers".
- aggregation abstract "Structural and electrical characterization has been carried out on metal–oxide–semiconductor (MOS) structures with a silicon dioxide (SiO2) layer containing a germanium nanocrystals (Ge-ncs) floating gate. Ge-nc layers were embedded in SiO2 by ion implantation with subsequent annealing. Structural analysis proved the presence of two self-aligned nanocrystal layers within the SiO2 host material. The electrical results indicate a strong memory effect due to the presence of a near-interface Ge-nc layer. Few volts memory windows can easily be obtained at relatively low programming voltages (<6 V). For comparison, operating voltages used in current FLASH technology are about 12 V. Despite its promising structural properties, retention times extracted from capacitance measurements and scanning Kelvin microscopy were found to be too low (~105 s) to comply with the non-volatility industry requirements (<10 years required).".
- aggregation authorList BK426753.
- aggregation endPage "842".
- aggregation issue "8".
- aggregation startPage "837".
- aggregation volume "22".
- aggregation aggregates 1026748.
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- aggregation similarTo 001.
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