Matches in Ghent University Academic Bibliography for { <https://biblio.ugent.be/publication/1036622> ?p ?o. }
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- 1036622 classification C1.
- 1036622 date "2009".
- 1036622 language "eng".
- 1036622 type conference.
- 1036622 hasPart 1036629.pdf.
- 1036622 subject "Physics and Astronomy".
- 1036622 presentedAt urn:uuid:bb67fa4b-a132-4bf2-9ebe-0edbfb32bccf.
- 1036622 abstract "This paper underpins the influence of space-charge condition at the substrate / BOX interface, as a function of the gate length, on the front threshold voltage (VTHf) and subthreshold slope (S) of sub-32 nm Ultra Thin body (UTB) SOI MOSFETs with very thin buried oxide (UTB2).".
- 1036622 author 265C4084-F0EE-11E1-A9DE-61C894A0A6B4.
- 1036622 author urn:uuid:026aab15-9800-409c-b367-0d6bc9e2a72e.
- 1036622 author urn:uuid:37f49706-c095-4d71-b049-f8f7095240eb.
- 1036622 author urn:uuid:5593c4d5-b2c7-4573-8ce7-71a84d0659d4.
- 1036622 author urn:uuid:a58240cc-80bb-4a51-980a-e4f166a79049.
- 1036622 author urn:uuid:e1cdb119-c81c-48f2-a2b7-c270fdc3678f.
- 1036622 dateCreated "2010-09-03T13:19:52Z".
- 1036622 dateModified "2024-07-09T07:49:30Z".
- 1036622 name "Substrate effects in sub-32 nm ultra thin SOI MOSFETs with thin buried oxide".
- 1036622 pagination urn:uuid:4a777fea-9814-4bb6-84b2-183312a11939.
- 1036622 publisher urn:uuid:ff0e72a6-5df9-4557-beea-b2f063b7b34e.
- 1036622 sameAs LU-1036622.
- 1036622 sourceOrganization urn:uuid:697c087f-c254-404f-a294-ae7d0e2a3d85.
- 1036622 type C1.