Matches in UGent Biblio for { <https://biblio.ugent.be/publication/1036666#aggregation> ?p ?o. }
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- aggregation classification "C1".
- aggregation creator B113160.
- aggregation creator B113161.
- aggregation creator B113162.
- aggregation creator person.
- aggregation date "2005".
- aggregation format "application/pdf".
- aggregation hasFormat 1036666.bibtex.
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- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Physics and Astronomy".
- aggregation title "EEPROM retention time extrapolation from floating gate SILC measurements".
- aggregation abstract "This work presents new experimental data on ultra-low level Stress Induced Leakage Currents measured in 7 - 8 nm EEPROM tunnel oxides at room temperature, by using the the floating gate technique. Current-voltage characteristics are successfully modelized by to a one-step tunneling model taking into account the spatial and energetical profiles of defects in SiO2. New phenomena are pointed out, as negative differential resistance and the appearing of threshold voltages below which a rapid decrease of the conduction current is observed. According to our model, these behaviors can be well-simulated considering discrete defects energy levels in the SiO2 bandgap. Threshold voltages measured around 2 to 3 V appear to be very close to retention conditions floating gate potentials in EEPROM cells. According to a simple model, EEPROM retention times are extrapolated and it is shown that the particular behavior of SILC currents could explain the fact that retention times remain in the product specifications even for hardly cycled cells.".
- aggregation authorList BK289582.
- aggregation endPage "254".
- aggregation startPage "251".
- aggregation aggregates 1036676.
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