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- aggregation classification "P1".
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- aggregation date "2010".
- aggregation format "application/pdf".
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- aggregation isPartOf urn:issn:1949-2081.
- aggregation language "eng".
- aggregation publisher "IEEE".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Technology and Engineering".
- aggregation title "High efficiency broadband polarization rotator on silicon-on-insulator".
- aggregation abstract "We demonstrate a polarization rotator fabricated using a 4 etch-step CMOS-compatible process including layer depositions on a silicon-on-insulator wafer by means of 193nm deep UV lithography. The measured polarization rotation efficiency is at least -0.5dB over a wavelength range of 80nm around 1550nm.".
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