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- aggregation classification "A1".
- aggregation creator B105931.
- aggregation creator B105932.
- aggregation creator B105933.
- aggregation creator person.
- aggregation creator person.
- aggregation date "1997".
- aggregation format "application/pdf".
- aggregation hasFormat 181647.bibtex.
- aggregation hasFormat 181647.csv.
- aggregation hasFormat 181647.dc.
- aggregation hasFormat 181647.didl.
- aggregation hasFormat 181647.doc.
- aggregation hasFormat 181647.json.
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- aggregation isPartOf urn:issn:0022-0248.
- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Technology and Engineering".
- aggregation title "Study of GaN and InGaN films grown by metalorganic chemical vapour deposition".
- aggregation abstract "In this paper GaN and InGaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The GaN and InGaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.".
- aggregation authorList BK271179.
- aggregation endPage "348".
- aggregation issue "1-4".
- aggregation startPage "344".
- aggregation volume "170".
- aggregation aggregates 1897411.
- aggregation isDescribedBy 181647.
- aggregation similarTo S0022-0248(96)00595-7.
- aggregation similarTo LU-181647.