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- aggregation classification "A1".
- aggregation creator B511146.
- aggregation creator B511147.
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- aggregation creator B511149.
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- aggregation creator person.
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- aggregation date "2011".
- aggregation format "application/pdf".
- aggregation hasFormat 2042936.bibtex.
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- aggregation isPartOf urn:issn:0741-3106.
- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Chemistry".
- aggregation title "High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing".
- aggregation abstract "Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it (< 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap (> 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of < 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.".
- aggregation authorList BK857049.
- aggregation endPage "1658".
- aggregation issue "12".
- aggregation startPage "1656".
- aggregation volume "32".
- aggregation aggregates 2154331.
- aggregation isDescribedBy 2042936.
- aggregation similarTo LED.2011.2166993.
- aggregation similarTo LU-2042936.