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- aggregation classification "C3".
- aggregation creator B114567.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation date "2012".
- aggregation format "application/pdf".
- aggregation hasFormat 2120899.bibtex.
- aggregation hasFormat 2120899.csv.
- aggregation hasFormat 2120899.dc.
- aggregation hasFormat 2120899.didl.
- aggregation hasFormat 2120899.doc.
- aggregation hasFormat 2120899.json.
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- aggregation hasFormat 2120899.txt.
- aggregation hasFormat 2120899.xls.
- aggregation hasFormat 2120899.yaml.
- aggregation language "eng".
- aggregation rights "I have retained and own the full copyright for this publication".
- aggregation subject "Chemistry".
- aggregation title "A temperature independent emission component in the capacitance transients of deep-level defects in germanium".
- aggregation abstract "The last decades germanium is regaining importance as active layer in semiconductor technology because of the high (drift) mobility of carriers. Most of the interesting properties of this material stem from impurities and point defects. Some of these impurities (f.e. transition metals) give rise to deep levels in the band gap, which can reduce the carrier lifetime and therefor need to be studied. Due to its high sensitivity, deep level transient spectroscopy (DLTS) is an excellent technique to detect and identify these impurities and defects. In this work, p-type germanium wafers have been quenched or intentionally contaminated with transition metals and studied by DLTS. At low temperatures, a quasi-constant emission component has been observed at high time windows (oder of seconds). This component can be associated with a tunneling emission of holes from a defect state towards the valence band. By considering a single quantum well and using the model proposed by Letartre et al. [1], experimental evidence of this tunneling effect in germanium will be given and the electrical properties of these defects will be examined. [1] X. Letartre, D. Stiévenard, M. Lannoo and E. Barbier, J. Appl. Phys. 69, 7336 (1991)".
- aggregation authorList BK293998.
- aggregation aggregates 2120965.
- aggregation isDescribedBy 2120899.
- aggregation similarTo LU-2120899.