Matches in UGent Biblio for { <https://biblio.ugent.be/publication/409330#aggregation> ?p ?o. }
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- aggregation classification "P1".
- aggregation creator B114944.
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- aggregation date "2000".
- aggregation hasFormat 409330.bibtex.
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- aggregation isPartOf urn:isbn:9780819435552.
- aggregation isPartOf urn:issn:0277-786X.
- aggregation language "eng".
- aggregation publisher "SPIE, the International Society for Optical Engineering".
- aggregation subject "Technology and Engineering".
- aggregation title "4mW micro cavity LED at 650nm on germanium substrates.".
- aggregation abstract "We report on the realisation of red micro cavity ZED's on germanium substrates, offering a significant cost advantage compared to GaAs wafers. The MCLED structure,grown by LP-MOVPE, consists of 3 GaInP quantum wells within a (detuned) 1-lambda AlGaInP cavity, enclosed by Al95GaAs/Al55GaAs DBR's, with a current spreading layer on top. MCLED's with a 200 mu m aperture, exhibit a quantum efficiency up to 4.35% (at 10 mA) and an optical power higher than 4 mW (at 80 mA), without any packaging. The optical spectrum was centered at 650 nm with a FWHM of +/- 13 nm. Because of the detuning the opening angle of these structures was as much as 120 degrees. Rudimentary packaging resulted in a luminous intensity of 2.5 cd at 30 mA, with an opening angle of +/- 30. Initially the electrical performance was not optimal, but additional tests and a new processing have indicated that forward biases as low as 2.0 V (at 20 mA) can be obtained for LED's on Ge-substrates. The new processing further resulted in an improved optical output with 5 dmW at 80 mA. We feel there is room for further improvement, but already we have demonstrated the feasibility of germanium substrates for commercial red (to orange/yellow) LED applications.".
- aggregation authorList BK295114.
- aggregation endPage "204".
- aggregation startPage "196".
- aggregation volume "3938".
- aggregation isDescribedBy 409330.
- aggregation similarTo 12.382838.
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