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- aggregation classification "A4".
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation date "2013".
- aggregation format "application/pdf".
- aggregation hasFormat 4095248.bibtex.
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- aggregation isPartOf urn:issn:0773-8838.
- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Physics and Astronomy".
- aggregation title "Influence of Al doping on the bandgap of TiOx".
- aggregation abstract "Al doped TiOx thin films were deposited using Ti targets with Al inserts. Both the effect of the number of aluminium inserts and the discharge current on the discharge voltage, on the aluminium content in the thin films, and on the reactive sputtering behaviour was investigated. The aluminium content in the film was measured using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) revealed that the as-deposited thin films were amorphous, independent of the aluminium content or the discharge current. The XPS results indicated that the oxide films were substoichiometric. The optical band gap of the Ti(Al)Ox thin films was investigated as a function of the aluminium concentration and the discharge current. The addition of aluminium results in a significant increase of the band gap at low discharge currents, while no significant influence on the band gap was found at higher currents.".
- aggregation authorList BK1216348.
- aggregation endPage "6".
- aggregation issue "3".
- aggregation startPage "1".
- aggregation volume "29".
- aggregation aggregates 4095250.
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