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- aggregation classification "A1".
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- aggregation date "2013".
- aggregation format "application/pdf".
- aggregation hasFormat 4117251.bibtex.
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- aggregation isPartOf urn:issn:1931-7573.
- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Technology and Engineering".
- aggregation title "Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers".
- aggregation abstract "Barium Titanate (BaTiO3) thin films are prepared by conventional 2- methoxy ethanol based chemical solution deposition. We report highly c-axis oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The SEM and AFM studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150 nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5µC/cm2, and coercive field (Ec) of 60 kV/cm.".
- aggregation authorList BK1216505.
- aggregation endPage "7".
- aggregation startPage "1".
- aggregation volume "8".
- aggregation aggregates 4418462.
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- aggregation similarTo 1556-276X-8-62.
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