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- aggregation classification "A1".
- aggregation creator B408962.
- aggregation creator B408963.
- aggregation creator person.
- aggregation creator person.
- aggregation date "2008".
- aggregation format "application/pdf".
- aggregation hasFormat 676498.bibtex.
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- aggregation isPartOf urn:issn:0018-9383.
- aggregation language "eng".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Technology and Engineering".
- aggregation title "Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies".
- aggregation abstract "An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35-mu m CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device's static and dynamic behavior is analyzed through 2D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.".
- aggregation authorList BK724490.
- aggregation endPage "445".
- aggregation issue "1".
- aggregation startPage "435".
- aggregation volume "55".
- aggregation aggregates 711230.
- aggregation isDescribedBy 676498.
- aggregation similarTo TED.2007.911087.
- aggregation similarTo LU-676498.