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- aggregation classification "P1".
- aggregation creator B92807.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation creator person.
- aggregation date "2009".
- aggregation format "application/pdf".
- aggregation hasFormat 784003.bibtex.
- aggregation hasFormat 784003.csv.
- aggregation hasFormat 784003.dc.
- aggregation hasFormat 784003.didl.
- aggregation hasFormat 784003.doc.
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- aggregation isPartOf urn:isbn:9781424434329.
- aggregation isPartOf urn:issn:1092-8669.
- aggregation language "eng".
- aggregation publisher "IEEE".
- aggregation rights "I have transferred the copyright for this publication to the publisher".
- aggregation subject "Technology and Engineering".
- aggregation title "Investigation of evanescent coupling between SOI waveguides and heterogeneously-integrated III-V pin photodetectors".
- aggregation abstract "Integrating III-V materials on Si is a promising candidate to realize both passive and active optical functions on a single silicon chip. We have developed this heterogeneous integration technology by means of an adhesive die-to-wafer bonding process under a low temperature. In this paper, efficient evanescent coupling between SOI waveguides and heterogeneously-integrated III-V pin photodetectors is proposed. The serious absorption by p-InGaAs and metal contact layers are greatly reduced by introducing a central opening on these layers. The thickness of the i-InGaAs layer is also optimized towards efficient absorption.".
- aggregation authorList BK239004.
- aggregation endPage "162".
- aggregation startPage "159".
- aggregation aggregates 799989.
- aggregation isDescribedBy 784003.
- aggregation similarTo ICIPRM.2009.5012467.
- aggregation similarTo LU-784003.