Matches in UGent Biblio for { <https://biblio.ugent.be/publication/789315#aggregation> ?p ?o. }
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- aggregation classification "P1".
- aggregation creator B70354.
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- aggregation creator person.
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- aggregation date "2008".
- aggregation hasFormat 789315.bibtex.
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- aggregation isPartOf urn:isbn:978-1-4244-2377-4.
- aggregation language "eng".
- aggregation publisher "IEEE".
- aggregation title "0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications".
- aggregation abstract "We demonstrate for the first time record low Leakage-EOT (3.5x10(-7) A/cm(2) at 1V, EOT=0.49 nm) MIM capacitors fabricated using a low temperature (250 degrees C) ALD SrTiO3 (STO) deposition process on ALD TiN bottom electrode. While most previous work on STO used deposition techniques not compatible with high aspect ratio DRAM applications, recent work on ALD STO showed promise on noble-like metal electrodes (Ru, Pt) [1,2]. In this work, a low temperature ALD process with alternative precursor set and carefully optimized deposition and processing conditions enables the use of low-cost, manufacturable-friendly TiN electrode MIMcaps for future DRAM nodes. Composition (Sr-rich) and process optimization allowed minimization of interfacial EOT penalties and leakage reduction by decreasing the density of leakier STO grains.".
- aggregation authorList BK178633.
- aggregation endPage "932".
- aggregation startPage "929".
- aggregation isDescribedBy 789315.
- aggregation similarTo IEDM.2008.4796852.
- aggregation similarTo LU-789315.