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- 22_nanometer abstract "The 22 nanometer (22 nm) is the process step following the 32 nm in CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. It was first introduced by semiconductor companies in 2008 for use in memory products, while first consumer-level CPU deliveries started in April 2012.The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this point, possibly disturbing Moore's law.On the ITRS roadmap, the successor to 22 nm technology will be 14 nm technology.".
- 22_nanometer wikiPageID "7542898".
- 22_nanometer wikiPageRevisionID "595008026".
- 22_nanometer hasPhotoCollection 22_nanometer.
- 22_nanometer list "CMOS manufacturing processes".
- 22_nanometer next "14.0".
- 22_nanometer prev "32.0".
- 22_nanometer subject Category:International_Technology_Roadmap_for_Semiconductors_lithography_nodes.
- 22_nanometer comment "The 22 nanometer (22 nm) is the process step following the 32 nm in CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm.".
- 22_nanometer label "22 nanometer".
- 22_nanometer label "22 nanómetros".
- 22_nanometer label "22 nm".
- 22_nanometer sameAs 22_nanómetros.
- 22_nanometer sameAs 22_nm.
- 22_nanometer sameAs 22_nm_공정.
- 22_nanometer sameAs m.0264y2j.
- 22_nanometer sameAs Q1059061.
- 22_nanometer sameAs Q1059061.
- 22_nanometer wasDerivedFrom 22_nanometer?oldid=595008026.
- 22_nanometer isPrimaryTopicOf 22_nanometer.