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- Dry_etching abstract "Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.".
- Dry_etching wikiPageID "1112733".
- Dry_etching wikiPageRevisionID "581174282".
- Dry_etching hasPhotoCollection Dry_etching.
- Dry_etching subject Category:Etching_(microfabrication).
- Dry_etching subject Category:Microtechnology.
- Dry_etching subject Category:Semiconductor_device_fabrication.
- Dry_etching comment "Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.".
- Dry_etching label "Dry etching".
- Dry_etching label "Gravure sèche".
- Dry_etching label "Plasma etsen".
- Dry_etching label "Trockenätzen".
- Dry_etching label "نقش جاف".
- Dry_etching label "ドライエッチング".
- Dry_etching sameAs Trockenätzen.
- Dry_etching sameAs Gravure_sèche.
- Dry_etching sameAs ドライエッチング.
- Dry_etching sameAs 드라이_에칭.
- Dry_etching sameAs Plasma_etsen.
- Dry_etching sameAs m.0472hp.
- Dry_etching sameAs Q1191918.
- Dry_etching sameAs Q1191918.
- Dry_etching wasDerivedFrom Dry_etching?oldid=581174282.
- Dry_etching isPrimaryTopicOf Dry_etching.