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- Ferroelectric_RAM abstract "Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FeRAM advantages over flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles (exceeding 1016 for 3.3 V devices). Disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations, and higher cost.".
- Ferroelectric_RAM thumbnail FeRAM_cell_configuration_1.svg?width=300.
- Ferroelectric_RAM wikiPageExternalLink tutorial.html.
- Ferroelectric_RAM wikiPageExternalLink fram.
- Ferroelectric_RAM wikiPageExternalLink fram-ferroelectric-random-access-memory-basics-tutorial.php.
- Ferroelectric_RAM wikiPageExternalLink www.ramtron-online.cn.
- Ferroelectric_RAM wikiPageExternalLink index.htm?DCMP=FRAM&HQS=Other+PR+fr57xx-pr-lp.
- Ferroelectric_RAM wikiPageID "2075960".
- Ferroelectric_RAM wikiPageRevisionID "590906388".
- Ferroelectric_RAM hasPhotoCollection Ferroelectric_RAM.
- Ferroelectric_RAM subject Category:Emerging_technologies.
- Ferroelectric_RAM subject Category:Non-volatile_memory.
- Ferroelectric_RAM subject Category:Types_of_RAM.
- Ferroelectric_RAM type Abstraction100002137.
- Ferroelectric_RAM type Act100030358.
- Ferroelectric_RAM type Activity100407535.
- Ferroelectric_RAM type Application100949134.
- Ferroelectric_RAM type EmergingTechnologies.
- Ferroelectric_RAM type Event100029378.
- Ferroelectric_RAM type Occupation100582388.
- Ferroelectric_RAM type Profession100609953.
- Ferroelectric_RAM type PsychologicalFeature100023100.
- Ferroelectric_RAM type Technology100949619.
- Ferroelectric_RAM type Use100947128.
- Ferroelectric_RAM type YagoPermanentlyLocatedEntity.
- Ferroelectric_RAM comment "Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.".
- Ferroelectric_RAM label "FRAM (typ pamięci)".
- Ferroelectric_RAM label "FRAM".
- Ferroelectric_RAM label "FRAM".
- Ferroelectric_RAM label "FeRAM".
- Ferroelectric_RAM label "Ferroelectric RAM".
- Ferroelectric_RAM label "Ferroelectric Random Access Memory".
- Ferroelectric_RAM label "Ferroelectric Random Access Memory".
- Ferroelectric_RAM label "Memoria FRAM".
- Ferroelectric_RAM label "強誘電体メモリ".
- Ferroelectric_RAM label "鐵電隨機存取記憶體".
- Ferroelectric_RAM sameAs Paměť_FRAM.
- Ferroelectric_RAM sameAs Ferroelectric_Random_Access_Memory.
- Ferroelectric_RAM sameAs Memoria_FRAM.
- Ferroelectric_RAM sameAs Ferroelectric_Random_Access_Memory.
- Ferroelectric_RAM sameAs FeRAM.
- Ferroelectric_RAM sameAs 強誘電体メモリ.
- Ferroelectric_RAM sameAs FeRAM.
- Ferroelectric_RAM sameAs FRAM_(typ_pamięci).
- Ferroelectric_RAM sameAs FRAM.
- Ferroelectric_RAM sameAs m.06khb8.
- Ferroelectric_RAM sameAs Q703656.
- Ferroelectric_RAM sameAs Q703656.
- Ferroelectric_RAM sameAs Ferroelectric_RAM.
- Ferroelectric_RAM wasDerivedFrom Ferroelectric_RAM?oldid=590906388.
- Ferroelectric_RAM depiction FeRAM_cell_configuration_1.svg.
- Ferroelectric_RAM isPrimaryTopicOf Ferroelectric_RAM.