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- Gallium_indium_arsenide_antimonide_phosphide abstract "Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material.Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodes and thermophotovoltaic cells.GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The exact composition can be tuned in order to make it lattice matched. The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap.".
- Gallium_indium_arsenide_antimonide_phosphide wikiPageID "17118806".
- Gallium_indium_arsenide_antimonide_phosphide wikiPageRevisionID "600924817".
- Gallium_indium_arsenide_antimonide_phosphide hasPhotoCollection Gallium_indium_arsenide_antimonide_phosphide.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:Antimony_compounds.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:Arsenides.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:Gallium_compounds.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:III-V_compounds.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:Indium_compounds.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:Phosphides.
- Gallium_indium_arsenide_antimonide_phosphide subject Category:Semiconductor_materials.
- Gallium_indium_arsenide_antimonide_phosphide type Abstraction100002137.
- Gallium_indium_arsenide_antimonide_phosphide type AntimonyCompounds.
- Gallium_indium_arsenide_antimonide_phosphide type ArsenicCompounds.
- Gallium_indium_arsenide_antimonide_phosphide type Cognition100023271.
- Gallium_indium_arsenide_antimonide_phosphide type Compound105870180.
- Gallium_indium_arsenide_antimonide_phosphide type Concept105835747.
- Gallium_indium_arsenide_antimonide_phosphide type Content105809192.
- Gallium_indium_arsenide_antimonide_phosphide type GalliumCompounds.
- Gallium_indium_arsenide_antimonide_phosphide type III-VCompounds.
- Gallium_indium_arsenide_antimonide_phosphide type Idea105833840.
- Gallium_indium_arsenide_antimonide_phosphide type IndiumCompounds.
- Gallium_indium_arsenide_antimonide_phosphide type Material114580897.
- Gallium_indium_arsenide_antimonide_phosphide type Matter100020827.
- Gallium_indium_arsenide_antimonide_phosphide type Part113809207.
- Gallium_indium_arsenide_antimonide_phosphide type PhysicalEntity100001930.
- Gallium_indium_arsenide_antimonide_phosphide type PsychologicalFeature100023100.
- Gallium_indium_arsenide_antimonide_phosphide type Relation100031921.
- Gallium_indium_arsenide_antimonide_phosphide type SemiconductorMaterials.
- Gallium_indium_arsenide_antimonide_phosphide type Substance100019613.
- Gallium_indium_arsenide_antimonide_phosphide type Whole105869584.
- Gallium_indium_arsenide_antimonide_phosphide comment "Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material.Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodes and thermophotovoltaic cells.GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The exact composition can be tuned in order to make it lattice matched.".
- Gallium_indium_arsenide_antimonide_phosphide label "Gallium indium arsenide antimonide phosphide".
- Gallium_indium_arsenide_antimonide_phosphide sameAs m.0421xzt.
- Gallium_indium_arsenide_antimonide_phosphide sameAs Q5519105.
- Gallium_indium_arsenide_antimonide_phosphide sameAs Q5519105.
- Gallium_indium_arsenide_antimonide_phosphide sameAs Gallium_indium_arsenide_antimonide_phosphide.
- Gallium_indium_arsenide_antimonide_phosphide wasDerivedFrom Gallium_indium_arsenide_antimonide_phosphide?oldid=600924817.
- Gallium_indium_arsenide_antimonide_phosphide isPrimaryTopicOf Gallium_indium_arsenide_antimonide_phosphide.