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- GeSbTe abstract "GeSbTe, Germanium-Antimony-Tellurium or GST is a phase change material from the group of chalcogenide glasses, used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written, and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100-150 °C.During writing, the material is erased, initialized into its crystalline state, with low-intensity laser irradiation. The material heats up to its crystallization temperature, but not its melting point, and crystallizes. The information is written at the crystalline phase, by heating spots of it with short (<10 ns), high-intensity laser pulses; the material melts locally and is quickly cooled, remaining in the amorphous phase. As the amorphous phase has lower reflectivity than the crystalline phase, data can be recorded as dark spots on the crystalline background. Recently, novel liquid organogermanium precursors, such as isobutylgermane (abbr: IBGe) and tetrakis(dimethylamino)germane (abbr: TDMAGe) were developed and used in conjunction with the metalorganics of antimony and tellurium, such as tris-dimethylamino antimony (TDMASb) and Di-isopropyl telluride (abbr: DIPTe) respectively, to grow GeSbTe and other chalcogenide films of very high purity by metalorganic chemical vapor deposition (MOCVD). Dimethylamino germanium trichloride (abbr: DMAGeC) is also reported as the chloride containing and a superior dimethylaminogermanium precursor for Ge deposition by MOCVD.".
- GeSbTe thumbnail Phase_diagram.jpg?width=300.
- GeSbTe wikiPageExternalLink DIPTe.
- GeSbTe wikiPageExternalLink DMAGeC.
- GeSbTe wikiPageExternalLink IBGE.
- GeSbTe wikiPageExternalLink TDMGe.
- GeSbTe wikiPageID "3833379".
- GeSbTe wikiPageRevisionID "606588949".
- GeSbTe hasPhotoCollection GeSbTe.
- GeSbTe subject Category:Alloys.
- GeSbTe subject Category:Chalcogenides.
- GeSbTe subject Category:DVD.
- GeSbTe subject Category:Germanium_chemistry.
- GeSbTe subject Category:Non-oxide_glasses.
- GeSbTe subject Category:Optical_materials.
- GeSbTe type Abstraction100002137.
- GeSbTe type Alloy114586769.
- GeSbTe type Alloys.
- GeSbTe type Cognition100023271.
- GeSbTe type Compound105870180.
- GeSbTe type Concept105835747.
- GeSbTe type Content105809192.
- GeSbTe type GermaniumCompounds.
- GeSbTe type Idea105833840.
- GeSbTe type Material114580897.
- GeSbTe type Matter100020827.
- GeSbTe type Mixture114586258.
- GeSbTe type OpticalMaterials.
- GeSbTe type Part113809207.
- GeSbTe type PhysicalEntity100001930.
- GeSbTe type PsychologicalFeature100023100.
- GeSbTe type Relation100031921.
- GeSbTe type Substance100019613.
- GeSbTe type Whole105869584.
- GeSbTe comment "GeSbTe, Germanium-Antimony-Tellurium or GST is a phase change material from the group of chalcogenide glasses, used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written, and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor.".
- GeSbTe label "GeSbTe".
- GeSbTe label "GeSbTe".
- GeSbTe sameAs GeSbTe.
- GeSbTe sameAs m.0b2cmt.
- GeSbTe sameAs Q3759140.
- GeSbTe sameAs Q3759140.
- GeSbTe sameAs GeSbTe.
- GeSbTe wasDerivedFrom GeSbTe?oldid=606588949.
- GeSbTe depiction Phase_diagram.jpg.
- GeSbTe isPrimaryTopicOf GeSbTe.
