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- High-electron-mobility_transistor abstract "A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receivers, voltage converters, and radar equipment.".
- High-electron-mobility_transistor thumbnail HEMT-scheme-en.svg?width=300.
- High-electron-mobility_transistor wikiPageExternalLink 18HFET.pdf.
- High-electron-mobility_transistor wikiPageID "842493".
- High-electron-mobility_transistor wikiPageRevisionID "597043688".
- High-electron-mobility_transistor hasPhotoCollection High-electron-mobility_transistor.
- High-electron-mobility_transistor subject Category:Microwave_technology.
- High-electron-mobility_transistor subject Category:Terahertz_technology.
- High-electron-mobility_transistor subject Category:Transistor_types.
- High-electron-mobility_transistor comment "A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.".
- High-electron-mobility_transistor label "HEMT".
- High-electron-mobility_transistor label "High-electron-mobility transistor".
- High-electron-mobility_transistor label "High-electron-mobility transistor".
- High-electron-mobility_transistor label "Transistores HEMT".
- High-electron-mobility_transistor label "Транзистор с высокой подвижностью электронов".
- High-electron-mobility_transistor label "高电子迁移率晶体管".
- High-electron-mobility_transistor label "高電子移動度トランジスタ".
- High-electron-mobility_transistor sameAs High-electron-mobility_transistor.
- High-electron-mobility_transistor sameAs Transistores_HEMT.
- High-electron-mobility_transistor sameAs Transistor_pergerakan-elektron_tinggi.
- High-electron-mobility_transistor sameAs HEMT.
- High-electron-mobility_transistor sameAs 高電子移動度トランジスタ.
- High-electron-mobility_transistor sameAs m.03g6n8.
- High-electron-mobility_transistor sameAs Q1617706.
- High-electron-mobility_transistor sameAs Q1617706.
- High-electron-mobility_transistor wasDerivedFrom High-electron-mobility_transistor?oldid=597043688.
- High-electron-mobility_transistor depiction HEMT-scheme-en.svg.
- High-electron-mobility_transistor isPrimaryTopicOf High-electron-mobility_transistor.
