Matches in DBpedia 2014 for { <http://dbpedia.org/resource/Induced_high_electron_mobility_transistor> ?p ?o. }
Showing items 1 to 17 of
17
with 100 items per page.
- Induced_high_electron_mobility_transistor abstract "An induced high electron mobility transistor (HEMT) provides the flexibility to tune different electron densities with top gate. This is because the charge carriers are "induced" to the 2DEG plane rather than created by dopants. Compared to their modulation-doped counterparts, the absence of a doped layer enhances the electron mobility significantly.This level of cleanliness provides research opportunities in the field of Quantum Billiard for quantum chaos studies, or applications in ultra stable and ultra sensitive electronic devices.Researchers from the Quantum Electronic Devices Group (QED) at the Condensed Matter Physics Department, School of Physics at the University of New South Wales have created both n-type and p-type HEMT for studying fundamental quantum physics of electronic devices.".
- Induced_high_electron_mobility_transistor wikiPageExternalLink QED.
- Induced_high_electron_mobility_transistor wikiPageID "16821513".
- Induced_high_electron_mobility_transistor wikiPageRevisionID "592802904".
- Induced_high_electron_mobility_transistor confusing "April 2008".
- Induced_high_electron_mobility_transistor hasPhotoCollection Induced_high_electron_mobility_transistor.
- Induced_high_electron_mobility_transistor unreferenced "April 2008".
- Induced_high_electron_mobility_transistor subject Category:Microwave_technology.
- Induced_high_electron_mobility_transistor subject Category:Terahertz_technology.
- Induced_high_electron_mobility_transistor subject Category:Transistor_types.
- Induced_high_electron_mobility_transistor comment "An induced high electron mobility transistor (HEMT) provides the flexibility to tune different electron densities with top gate. This is because the charge carriers are "induced" to the 2DEG plane rather than created by dopants.".
- Induced_high_electron_mobility_transistor label "Induced high electron mobility transistor".
- Induced_high_electron_mobility_transistor sameAs m.0407f8b.
- Induced_high_electron_mobility_transistor sameAs Q6027211.
- Induced_high_electron_mobility_transistor sameAs Q6027211.
- Induced_high_electron_mobility_transistor wasDerivedFrom Induced_high_electron_mobility_transistor?oldid=592802904.
- Induced_high_electron_mobility_transistor isPrimaryTopicOf Induced_high_electron_mobility_transistor.