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- MOS_composite_static_induction_thyristor abstract "MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element. The low conduction loss and rugged structure MCS make it more favorable than conversional IGBT transistors.In the blocking state nearly the complete voltage drops at the SITh. Thus the MOSFET is not exposed to high field stress. For fast switching the MOSFET with only 30-50 V blocking voltage is able. In IGBT, charge carrier concentration at emitter side in n-base layer is low as holes injected from collector easily pass to emitter electrode through p-base layer. Thus the wide-base pnp transistor operates by virtue of its current gain characteristics causing the rise collector-emitter saturation voltage. In an MCS the positive difference between the voltage of regulation element and conduction voltage drop of MOSFET is applied to location between the collector region and emitter region of the pnp transistor. Hole concentration is accumulated at emitter side in n-base layer because of impossibility of the hole flow through forward bias collector-base junction of the pnp transistor. Carrier distribution in n-base is similar to that of saturation bipolar transistor and low saturation voltage of MCS, even at high voltage ratings, can be achieved.".
- MOS_composite_static_induction_thyristor wikiPageID "2238833".
- MOS_composite_static_induction_thyristor wikiPageRevisionID "274346668".
- MOS_composite_static_induction_thyristor hasPhotoCollection MOS_composite_static_induction_thyristor.
- MOS_composite_static_induction_thyristor subject Category:Semiconductor_devices.
- MOS_composite_static_induction_thyristor subject Category:Solid_state_switches.
- MOS_composite_static_induction_thyristor type Artifact100021939.
- MOS_composite_static_induction_thyristor type Conductor103088707.
- MOS_composite_static_induction_thyristor type Control103096960.
- MOS_composite_static_induction_thyristor type Device103183080.
- MOS_composite_static_induction_thyristor type Instrumentality103575240.
- MOS_composite_static_induction_thyristor type Mechanism103738472.
- MOS_composite_static_induction_thyristor type Object100002684.
- MOS_composite_static_induction_thyristor type PhysicalEntity100001930.
- MOS_composite_static_induction_thyristor type SemiconductorDevice104171831.
- MOS_composite_static_induction_thyristor type SemiconductorDevices.
- MOS_composite_static_induction_thyristor type SolidStateSwitches.
- MOS_composite_static_induction_thyristor type Switch104372370.
- MOS_composite_static_induction_thyristor type Whole100003553.
- MOS_composite_static_induction_thyristor comment "MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element. The low conduction loss and rugged structure MCS make it more favorable than conversional IGBT transistors.In the blocking state nearly the complete voltage drops at the SITh. Thus the MOSFET is not exposed to high field stress.".
- MOS_composite_static_induction_thyristor label "MOS composite static induction thyristor".
- MOS_composite_static_induction_thyristor sameAs m.06yc5g.
- MOS_composite_static_induction_thyristor sameAs Q6717159.
- MOS_composite_static_induction_thyristor sameAs Q6717159.
- MOS_composite_static_induction_thyristor sameAs MOS_composite_static_induction_thyristor.
- MOS_composite_static_induction_thyristor wasDerivedFrom MOS_composite_static_induction_thyristor?oldid=274346668.
- MOS_composite_static_induction_thyristor isPrimaryTopicOf MOS_composite_static_induction_thyristor.