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- Metal-induced_gap_states abstract "In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic structure) of the material is infinite. When the finite size of a crystal is taken into account, the wavefunctions of electrons are altered and states that are forbidden within the bulk semiconductor gap are allowed at the surface. Similarly, when a metal is deposited onto a semiconductor (by thermal evaporation, for example), the wavefunction of an electron in the semiconductor must match that of an electron in the metal at the interface. Since the Fermi levels of the two materials must match at the interface, there exists gap states that decay deeper into the semiconductor.".
- Metal-induced_gap_states thumbnail Diagram_of_band-bending_interfaces_between_two_different_metals_and_two_different_semiconductors.jpg?width=300.
- Metal-induced_gap_states wikiPageID "14698685".
- Metal-induced_gap_states wikiPageRevisionID "594953716".
- Metal-induced_gap_states hasPhotoCollection Metal-induced_gap_states.
- Metal-induced_gap_states subject Category:Electronic_band_structures.
- Metal-induced_gap_states subject Category:Semiconductor_structures.
- Metal-induced_gap_states type Artifact100021939.
- Metal-induced_gap_states type ElectronicBandStructures.
- Metal-induced_gap_states type Object100002684.
- Metal-induced_gap_states type PhysicalEntity100001930.
- Metal-induced_gap_states type SemiconductorStructures.
- Metal-induced_gap_states type Structure104341686.
- Metal-induced_gap_states type Whole100003553.
- Metal-induced_gap_states type YagoGeoEntity.
- Metal-induced_gap_states type YagoPermanentlyLocatedEntity.
- Metal-induced_gap_states comment "In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic structure) of the material is infinite. When the finite size of a crystal is taken into account, the wavefunctions of electrons are altered and states that are forbidden within the bulk semiconductor gap are allowed at the surface.".
- Metal-induced_gap_states label "Metal-induced gap states".
- Metal-induced_gap_states sameAs m.03gtgsx.
- Metal-induced_gap_states sameAs Q6822560.
- Metal-induced_gap_states sameAs Q6822560.
- Metal-induced_gap_states sameAs Metal-induced_gap_states.
- Metal-induced_gap_states wasDerivedFrom Metal-induced_gap_states?oldid=594953716.
- Metal-induced_gap_states depiction Diagram_of_band-bending_interfaces_between_two_different_metals_and_two_different_semiconductors.jpg.
- Metal-induced_gap_states isPrimaryTopicOf Metal-induced_gap_states.
