Matches in DBpedia 2014 for { <http://dbpedia.org/resource/Multi-threshold_CMOS> ?p ?o. }
Showing items 1 to 25 of
25
with 100 items per page.
- Multi-threshold_CMOS abstract "Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (Vth) in order to optimize delay or power. The Vth of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. Low Vth devices switch faster, and are therefore useful on critical delay paths to minimize clock periods. The penalty is that low Vth devices have substantially higher static leakage power. High Vth devices are used on non-critical paths to reduce static leakage power without incurring a delay penalty. Typical high Vth devices reduce static leakage by 10 times compared with low Vth devices.One method of creating devices with multiple threshold voltages is to apply different bias voltages (Vb) to the base or bulk terminal of the transistors. Other methods involve adjusting the gate oxide thickness, gate oxide dielectric constant (material type), or dopant concentration in the channel region beneath the gate oxide. A common method of fabricating multi-threshold CMOS involves simply adding additional photolithography and ion implantation steps. For a given fabrication process, the Vth is adjusted by altering the concentration of dopant atoms in the channel region beneath the gate oxide. Typically, the concentration is adjusted by ion implantation method. For example, photolithography methods are applied to cover all devices except the p-MOSFETs with photoresist. Ion implantation is then completed, with ions of the chosen dopant type penetrating the gate oxide in areas where no photoresist is present. The photoresist is then stripped. Photolithography methods are again applied to cover all devices except the n-MOSFETs. Another implantation is then completed using a different dopant type, with ions penetrating the gate oxide. The photoresist is stripped. At some point during the subsequent fabrication process, implanted ions are activated by annealing at an elevated temperature.In principle, any number of threshold voltage transistors can be produced. For CMOS having two threshold voltages, one additional photomasking and implantation step is required for each of p-MOSFET and n-MOSFET. For fabrication of normal, low, and high Vth CMOS, four additional steps are required relative to conventional single-Vth CMOS.".
- Multi-threshold_CMOS wikiPageID "9179644".
- Multi-threshold_CMOS wikiPageRevisionID "495275007".
- Multi-threshold_CMOS hasPhotoCollection Multi-threshold_CMOS.
- Multi-threshold_CMOS subject Category:Digital_electronics.
- Multi-threshold_CMOS subject Category:Electronic_design.
- Multi-threshold_CMOS subject Category:Logic_families.
- Multi-threshold_CMOS type Abstraction100002137.
- Multi-threshold_CMOS type Family108078020.
- Multi-threshold_CMOS type Group100031264.
- Multi-threshold_CMOS type LogicFamilies.
- Multi-threshold_CMOS type Organization108008335.
- Multi-threshold_CMOS type SocialGroup107950920.
- Multi-threshold_CMOS type Unit108189659.
- Multi-threshold_CMOS type YagoLegalActor.
- Multi-threshold_CMOS type YagoLegalActorGeo.
- Multi-threshold_CMOS type YagoPermanentlyLocatedEntity.
- Multi-threshold_CMOS comment "Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (Vth) in order to optimize delay or power. The Vth of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. Low Vth devices switch faster, and are therefore useful on critical delay paths to minimize clock periods.".
- Multi-threshold_CMOS label "Multi-threshold CMOS".
- Multi-threshold_CMOS sameAs m.027_c89.
- Multi-threshold_CMOS sameAs Q6934506.
- Multi-threshold_CMOS sameAs Q6934506.
- Multi-threshold_CMOS sameAs Multi-threshold_CMOS.
- Multi-threshold_CMOS wasDerivedFrom Multi-threshold_CMOS?oldid=495275007.
- Multi-threshold_CMOS isPrimaryTopicOf Multi-threshold_CMOS.