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• Phase-change_memory abstract "Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, Ovonic Unified Memory, Chalcogenide RAM and C-RAM) is a type of non-volatile random-access memory. PRAMs exploit the unique behavior of chalcogenide glass. In the older generation of PCM heat produced by the passage of an electric current through a heating element generally made of TiN would be used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies (most notably flash memory) with the same capability. Newer PCM technology has been trending in a couple different directions. Some groups have been directing a lot of research towards attempting to find viable material alternatives to Ge2Sb2Te5 (GST), with mixed success, while others have developed the idea of using a GeTe - Sb2Te3 superlattice in order to achieve non thermal phase changes by simply changing the coordination state of the Germanium atoms with a laser pulse, and this new Interfacial phase change memory (IPCM) has had many successes and continues to be the site of much active research.Leon Chua has argued that all 2-terminal non-volatile memory devices including phase change memory should be considered memristors. Stan Williams of HP Labs has also argued that phase change memory should be considered to be a memristor. Such claims, however, seem not to be justified given that the memristor theory is in itself open to question.".
• Phase-change_memory thumbnail PRAM_cell_structure.svg?width=300.
• Phase-change_memory wikiPageExternalLink VideoDetail.aspx?ContentId=1.
• Phase-change_memory wikiPageExternalLink ovonyx.com.
• Phase-change_memory wikiPageExternalLink a20071001PR200.html.
• Phase-change_memory wikiPageExternalLink c_ram.htm.
• Phase-change_memory wikiPageExternalLink memory_cram.htm.
• Phase-change_memory wikiPageExternalLink library2009.htm.
• Phase-change_memory wikiPageExternalLink 051213.html.
• Phase-change_memory wikiPageExternalLink ars.html.
• Phase-change_memory wikiPageExternalLink www.numonyx.com.
• Phase-change_memory wikiPageExternalLink Omneo.aspx.
• Phase-change_memory wikiPageExternalLink www.ovonic.com.
• Phase-change_memory wikiPageID "850973".
• Phase-change_memory wikiPageRevisionID "606460774".
• Phase-change_memory date "May 2013".
• Phase-change_memory for "Missing words".
• Phase-change_memory hasPhotoCollection Phase-change_memory.
• Phase-change_memory subject Category:Emerging_technologies.
• Phase-change_memory subject Category:Non-volatile_memory.
• Phase-change_memory subject Category:Types_of_RAM.
• Phase-change_memory type Abstraction100002137.
• Phase-change_memory type Act100030358.
• Phase-change_memory type Activity100407535.
• Phase-change_memory type Application100949134.
• Phase-change_memory type EmergingTechnologies.
• Phase-change_memory type Event100029378.
• Phase-change_memory type Occupation100582388.
• Phase-change_memory type Profession100609953.
• Phase-change_memory type PsychologicalFeature100023100.
• Phase-change_memory type Technology100949619.
• Phase-change_memory type Use100947128.
• Phase-change_memory type YagoPermanentlyLocatedEntity.
• Phase-change_memory comment "Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, Ovonic Unified Memory, Chalcogenide RAM and C-RAM) is a type of non-volatile random-access memory. PRAMs exploit the unique behavior of chalcogenide glass.".
• Phase-change_memory label "Memoria a cambiamento di fase".
• Phase-change_memory label "PCRAM".
• Phase-change_memory label "PRAM".
• Phase-change_memory label "PRAM".
• Phase-change_memory label "PRAM".
• Phase-change_memory label "Phase-Change Random Access Memory".
• Phase-change_memory label "Phase-change memory".
• Phase-change_memory label "Phase-change random access memory".
• Phase-change_memory label "Память с изменением фазового состояния".
• Phase-change_memory label "相變化記憶體".
• Phase-change_memory sameAs Phase-change_random_access_memory.
• Phase-change_memory sameAs PRAM.
• Phase-change_memory sameAs Phase-Change_Random_Access_Memory.
• Phase-change_memory sameAs Memoria_a_cambiamento_di_fase.
• Phase-change_memory sameAs PRAM.
• Phase-change_memory sameAs PRAM.
• Phase-change_memory sameAs PCRAM.
• Phase-change_memory sameAs PRAM.
• Phase-change_memory sameAs m.03h2w0.
• Phase-change_memory sameAs Q1153902.
• Phase-change_memory sameAs Q1153902.
• Phase-change_memory sameAs Phase-change_memory.
• Phase-change_memory wasDerivedFrom Phase-change_memory?oldid=606460774.
• Phase-change_memory depiction PRAM_cell_structure.svg.
• Phase-change_memory isPrimaryTopicOf Phase-change_memory.