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- Programmable_metallization_cell abstract "The programmable metallization cell, or PMC, is a new form of non-volatile computer memory being developed at Arizona State University and its spinoff, Axon Technologies. PMC is one of a number of technologies that are being developed to replace the widely used flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies, who licensed the technology in 2004, refers to it as conductive-bridging RAM, or CBRAM. NEC has a variant called “Nanobridge” and Sony calls their version “electrolytic memory”.The PMC technology is invented by Dr. Michael Kozicki, professor of electrical engineering at Arizona State University. In 1996, he founded Axon Technologies to commercialize it.".
- Programmable_metallization_cell wikiPageExternalLink Nov04NVMTSpaper.pdf.
- Programmable_metallization_cell wikiPageExternalLink www.axontc.com.
- Programmable_metallization_cell wikiPageExternalLink ~mkozicki.
- Programmable_metallization_cell wikiPageID "13973757".
- Programmable_metallization_cell wikiPageRevisionID "602231843".
- Programmable_metallization_cell hasPhotoCollection Programmable_metallization_cell.
- Programmable_metallization_cell subject Category:Computer_memory.
- Programmable_metallization_cell subject Category:Emerging_technologies.
- Programmable_metallization_cell subject Category:Non-volatile_memory.
- Programmable_metallization_cell type Abstraction100002137.
- Programmable_metallization_cell type Act100030358.
- Programmable_metallization_cell type Activity100407535.
- Programmable_metallization_cell type Application100949134.
- Programmable_metallization_cell type EmergingTechnologies.
- Programmable_metallization_cell type Event100029378.
- Programmable_metallization_cell type Occupation100582388.
- Programmable_metallization_cell type Profession100609953.
- Programmable_metallization_cell type PsychologicalFeature100023100.
- Programmable_metallization_cell type Technology100949619.
- Programmable_metallization_cell type Use100947128.
- Programmable_metallization_cell type YagoPermanentlyLocatedEntity.
- Programmable_metallization_cell comment "The programmable metallization cell, or PMC, is a new form of non-volatile computer memory being developed at Arizona State University and its spinoff, Axon Technologies. PMC is one of a number of technologies that are being developed to replace the widely used flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies, who licensed the technology in 2004, refers to it as conductive-bridging RAM, or CBRAM.".
- Programmable_metallization_cell label "CBRAM".
- Programmable_metallization_cell label "Programmable Metallization Cell".
- Programmable_metallization_cell label "Programmable metallization cell".
- Programmable_metallization_cell label "可編程金屬化單元".
- Programmable_metallization_cell sameAs Programmable_Metallization_Cell.
- Programmable_metallization_cell sameAs CBRAM.
- Programmable_metallization_cell sameAs m.03cpw8v.
- Programmable_metallization_cell sameAs Q1075992.
- Programmable_metallization_cell sameAs Q1075992.
- Programmable_metallization_cell sameAs Programmable_metallization_cell.
- Programmable_metallization_cell wasDerivedFrom Programmable_metallization_cell?oldid=602231843.
- Programmable_metallization_cell isPrimaryTopicOf Programmable_metallization_cell.