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- QBD_(electronics) abstract "QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total accumulated charge passing through the dielectric layer just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions.".
- QBD_(electronics) wikiPageID "1395171".
- QBD_(electronics) wikiPageRevisionID "537528640".
- QBD_(electronics) hasPhotoCollection QBD_(electronics).
- QBD_(electronics) subject Category:Semiconductor_device_defects.
- QBD_(electronics) type Abstraction100002137.
- QBD_(electronics) type Attribute100024264.
- QBD_(electronics) type Defect114464005.
- QBD_(electronics) type Imperfection114462666.
- QBD_(electronics) type SemiconductorDeviceDefects.
- QBD_(electronics) type State100024720.
- QBD_(electronics) comment "QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total accumulated charge passing through the dielectric layer just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions.".
- QBD_(electronics) label "QBD (electronics)".
- QBD_(electronics) sameAs m.04z5q2.
- QBD_(electronics) sameAs Q7265381.
- QBD_(electronics) sameAs Q7265381.
- QBD_(electronics) sameAs QBD_(electronics).
- QBD_(electronics) wasDerivedFrom QBD_(electronics)?oldid=537528640.
- QBD_(electronics) isPrimaryTopicOf QBD_(electronics).