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- Strained_silicon abstract "Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster.More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sources (silane and dichlorosilane) and germanium sources (germane, germanium tetrachloride, and isobutylgermane).More recent methods of inducing strain include doping the source and drain with lattice mismatched atoms such as germanium and carbon. Germanium doping of up to 20% in the P-channel MOSFET source and drain causes uniaxial compressive strain in the channel, increasing hole mobility. Carbon doping as low as 0.25% in the N-channel MOSFET source and drain causes uniaxial tensile strain in the channel, increasing electron mobility. Covering the NMOS transistor with a highly stressed silicon nitride layer is another way to create uniaxial tensile strain.".
- Strained_silicon wikiPageExternalLink 40125_0_art_file_1_1142292562.pdf.
- Strained_silicon wikiPageExternalLink www.belford-research.com.
- Strained_silicon wikiPageExternalLink news.php3?id=5899.
- Strained_silicon wikiPageExternalLink strainedsilicon.
- Strained_silicon wikiPageExternalLink science?_ob=ArticleURL&_udi=B6TJ6-4HNSJS8-X&_user=10&_handle=V-WA-A-W-AUY-MsSWYWW-UUA-U-AAZBCYVDBE-AAZAAZCCBE-WUWZDAWZE-AUY-U&_fmt=summary&_coverDate=01%2F25%2F2006&_rdoc=103&_orig=browse&_srch=%23toc%235302%232006%23997129997%23614855!&_cdi=5302&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=b727a26cf1d2921d65096fc1f93658bb.
- Strained_silicon wikiPageExternalLink science?_ob=ArticleURL&_udi=B6TJ6-4MS9K7M-1&_user=10&_coverDate=01%2F31%2F2007&_alid=571098462&_rdoc=1&_fmt=summary&_orig=search&_cdi=5302&_sort=d&_docanchor=&view=c&_ct=12&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=393a7a045ea6a5beee881039c2cf98e5.
- Strained_silicon wikiPageExternalLink read_article.aspx?id=17237&ch=infotech&sc=&pg=1.
- Strained_silicon wikiPageExternalLink 230905Rohm&Haas_Hi_purity_Ge_film.htm.
- Strained_silicon wikiPageID "2403235".
- Strained_silicon wikiPageRevisionID "585837147".
- Strained_silicon hasPhotoCollection Strained_silicon.
- Strained_silicon subject Category:Germanium_chemistry.
- Strained_silicon subject Category:Semiconductor_material_types.
- Strained_silicon subject Category:Semiconductor_materials.
- Strained_silicon subject Category:Silicon_chemistry.
- Strained_silicon type Abstraction100002137.
- Strained_silicon type Cognition100023271.
- Strained_silicon type Compound105870180.
- Strained_silicon type Concept105835747.
- Strained_silicon type Content105809192.
- Strained_silicon type GermaniumCompounds.
- Strained_silicon type Idea105833840.
- Strained_silicon type Material114580897.
- Strained_silicon type Matter100020827.
- Strained_silicon type Part113809207.
- Strained_silicon type PhysicalEntity100001930.
- Strained_silicon type PsychologicalFeature100023100.
- Strained_silicon type Relation100031921.
- Strained_silicon type SemiconductorMaterials.
- Strained_silicon type Substance100019613.
- Strained_silicon type Whole105869584.
- Strained_silicon comment "Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).".
- Strained_silicon label "Gestrecktes Silicium".
- Strained_silicon label "Strained silicon".
- Strained_silicon label "歪みシリコン".
- Strained_silicon sameAs Gestrecktes_Silicium.
- Strained_silicon sameAs 歪みシリコン.
- Strained_silicon sameAs m.079nls.
- Strained_silicon sameAs Q772250.
- Strained_silicon sameAs Q772250.
- Strained_silicon sameAs Strained_silicon.
- Strained_silicon wasDerivedFrom Strained_silicon?oldid=585837147.
- Strained_silicon isPrimaryTopicOf Strained_silicon.