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- Threshold_voltage abstract "The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the value of the gate–source voltage when the conducting channel just begins to connect the source and drain contacts of the transistor, allowing significant current. In wide planar transistors the threshold voltage is essentially independent of the drain–source voltage and is therefore a well defined characteristic, however it is less clear in modern nanometer-sized MOSFETs due to drain-induced barrier lowering.The threshold voltage of a junction field-effect transistor is often called pinch-off voltage instead, which is somewhat confusing since "pinch off" for an insulated-gate field-effect transistor is used to refer to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. The term "threshold voltage" is unambiguous and refers to the same concept in any field-effect transistor.In an n-MOSFET the substrate of the transistor is composed of p-type silicon (see doping (semiconductor)), which has positively charged mobile holes as carriers. When a positive voltage is applied on the gate, an electric field causes the holes to be repelled from the interface, creating a depletion region containing immobile negatively charged acceptor ions. A further increase in the gate voltage eventually causes electrons to appear at the interface, in what is called an inversion layer, or channel. Historically the gate voltage at which the electron density at the interface is the same as the hole density in the neutral bulk material is called the threshold voltage. Practically speaking the threshold voltage is the voltage at which there are sufficient electrons in the inversion layer to make a low resistance conducting path between the MOSFET source and drain. When the voltage between transistor gate and source (VGS) exceeds the threshold voltage (Vth), it is known as overdrive voltage.In the figures, the source (left side) and drain (right side) are labeled n+ to indicate heavily doped (blue) n-regions. The depletion layer dopant is labeled NA− to indicate that the ions in the (pink) depletion layer are negatively charged and there are very few holes. In the (red) bulk the number of holes p = NA making the bulk charge neutral.If the gate voltage is below the threshold voltage (top figure), the transistor is turned off and ideally there is no current from the drain to the source of the transistor. In fact, there is a current even for gate biases below the threshold (subthreshold leakage) current, although it is small and varies exponentially with gate bias.If the gate voltage is above the threshold voltage (lower figure), the transistor is turned on, due to there being many electrons in the channel at the oxide-silicon interface, creating a low-resistance channel where charge can flow from drain to source. For voltages significantly above the threshold, this situation is called strong inversion. The channel is tapered when VD > 0 because the voltage drop due to the current in the resistive channel reduces the oxide field supporting the channel as the drain is approached.".
- Threshold_voltage thumbnail MOSFET_DepletionRegion.png?width=300.
- Threshold_voltage wikiPageExternalLink 1855.
- Threshold_voltage wikiPageID "1422246".
- Threshold_voltage wikiPageRevisionID "585265458".
- Threshold_voltage hasPhotoCollection Threshold_voltage.
- Threshold_voltage subject Category:Electrical_parameters.
- Threshold_voltage subject Category:Transistor_modeling.
- Threshold_voltage type Abstraction100002137.
- Threshold_voltage type Cognition100023271.
- Threshold_voltage type Concept105835747.
- Threshold_voltage type Constant105858936.
- Threshold_voltage type Content105809192.
- Threshold_voltage type ElectricalParameters.
- Threshold_voltage type Idea105833840.
- Threshold_voltage type Parameter105859071.
- Threshold_voltage type PsychologicalFeature100023100.
- Threshold_voltage type Quantity105855125.
- Threshold_voltage comment "The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the value of the gate–source voltage when the conducting channel just begins to connect the source and drain contacts of the transistor, allowing significant current.".
- Threshold_voltage label "Schwellenspannung".
- Threshold_voltage label "Tensione di soglia".
- Threshold_voltage label "Threshold voltage".
- Threshold_voltage label "基板バイアス効果".
- Threshold_voltage label "阈值电压".
- Threshold_voltage sameAs Schwellenspannung.
- Threshold_voltage sameAs Tensione_di_soglia.
- Threshold_voltage sameAs 基板バイアス効果.
- Threshold_voltage sameAs m.0507yy.
- Threshold_voltage sameAs Q1754002.
- Threshold_voltage sameAs Q1754002.
- Threshold_voltage sameAs Threshold_voltage.
- Threshold_voltage wasDerivedFrom Threshold_voltage?oldid=585265458.
- Threshold_voltage depiction MOSFET_DepletionRegion.png.
- Threshold_voltage isPrimaryTopicOf Threshold_voltage.
