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- Wright_etch abstract "The Wright Etch is a preferential etch for revealing defects in (100) and (111) oriented, p- and n-type silicon. It was developed by Margaret Wright Jenkins in 1976 while working in research and development at Motorola Inc. It was published in 1977. This etchant reveals clearly defined oxidation-induced stacking faults, dislocations, swirls and striations with minimum surface roughness or extraneous pitting. These defects are known causes of shorts and current leakage in finished semiconductor devices (such as transistors) should they fall across isolated junctions. A relatively low etch rate (~1 micrometre per minute) at room temperature provides etch control. The long shelf life of this etchant allows the solution to be stored in large quantities. The present report summarizes the highlights of the Wright etch. For a detailed discussion of observation and findings, please consult the original publication.".
- Wright_etch wikiPageExternalLink PipelineDefectsinFlashDevices.pdf.
- Wright_etch wikiPageExternalLink t6_1_2.html.
- Wright_etch wikiPageID "27956374".
- Wright_etch wikiPageRevisionID "574247843".
- Wright_etch hasPhotoCollection Wright_etch.
- Wright_etch subject Category:Etching.
- Wright_etch subject Category:Etching_(microfabrication).
- Wright_etch comment "The Wright Etch is a preferential etch for revealing defects in (100) and (111) oriented, p- and n-type silicon. It was developed by Margaret Wright Jenkins in 1976 while working in research and development at Motorola Inc. It was published in 1977. This etchant reveals clearly defined oxidation-induced stacking faults, dislocations, swirls and striations with minimum surface roughness or extraneous pitting.".
- Wright_etch label "Wright etch".
- Wright_etch sameAs m.0ch1fb6.
- Wright_etch sameAs Q8038279.
- Wright_etch sameAs Q8038279.
- Wright_etch wasDerivedFrom Wright_etch?oldid=574247843.
- Wright_etch isPrimaryTopicOf Wright_etch.